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Wafer surface cleaning for silicon homoepitaxy with and without ECR hydrogen plasma exposure

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dc.contributor.advisor Rafael Reif. en_US
dc.contributor.author Kim, Hyoun-woo en_US
dc.date.accessioned 2005-09-26T18:37:04Z
dc.date.available 2005-09-26T18:37:04Z
dc.date.copyright 1994 en_US
dc.date.issued 1994 en_US
dc.identifier.uri http://hdl.handle.net/1721.1/28125
dc.description Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1994. en_US
dc.description Includes bibliographical references (leaves 138-143). en_US
dc.description.statementofresponsibility by Hyoun-woo Kim. en_US
dc.format.extent 143 leaves en_US
dc.format.extent 8771647 bytes
dc.format.extent 8790822 bytes
dc.format.mimetype application/pdf
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.publisher Massachusetts Institute of Technology en_US
dc.rights M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. en_US
dc.rights.uri http://dspace.mit.edu/handle/1721.1/7582
dc.subject Materials Science and Engineering en_US
dc.title Wafer surface cleaning for silicon homoepitaxy with and without ECR hydrogen plasma exposure en_US
dc.type Thesis en_US
dc.description.degree Ph.D. en_US
dc.contributor.department Massachusetts Institute of Technology. Dept. of Materials Science and Engineering en_US
dc.identifier.oclc 32147490 en_US


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