| dc.contributor.advisor | August F. Witt. | en_US |
| dc.contributor.author | Gale, Ronald Paul | en_US |
| dc.date.accessioned | 2007-11-16T14:13:28Z | |
| dc.date.available | 2007-11-16T14:13:28Z | |
| dc.date.copyright | 1978 | en_US |
| dc.date.issued | 1978 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/39492 | |
| dc.description | Thesis. 1978. Ph.D.--Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. | en_US |
| dc.description | MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE. | en_US |
| dc.description | Vita. | en_US |
| dc.description | Includes bibliographical references. | en_US |
| dc.format.extent | 223 leaves | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Massachusetts Institute of Technology | en_US |
| dc.rights | M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. | en_US |
| dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | |
| dc.subject | Materials Science and Engineering | en_US |
| dc.subject.lcsh | Gallium arsenide crystals | en_US |
| dc.subject.lcsh | Metal crystals Growth | en_US |
| dc.title | Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy. | en_US |
| dc.type | Thesis | en_US |
| dc.description.degree | Ph.D. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | |
| dc.identifier.oclc | 05881926 | en_US |
