Compound Semiconductor Materials and Devices
Author:
Fonstad, Clifton J., Jr.; Ahadian, Joseph F.; Royter, Yakov; Patterson, Steven G.; Wang, Hao; Viadyananthan, Praveen T.; Martin, Paul S.; Aggarwal, Rajni J.; Petrich, Gale S.; Kolodziejski, Leslie A.; Mikkelson, James M.; Goodhue, William D.; Fitzgerald, Eugene A.; Bulsara, Mayank T.; Hoshino, Isako; Tachikawa, Masami; Choy, Henry K.; Ram, Rachna J.; Livas, Jeffrey C.; Hall, Katherine L.; Prasad, Sheila; Shenoy, Krishna V.; Warde, Cardinal; Luo, Jiafu; Psaltis, Demetri; Pan, Janet L.; Crankshaw, Donald S.; Kannam, P.; Martin, R. J.
Publisher:
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Date Issued:
1996-01-01
Description:
Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on fourteen research projects and a list of publications.
Other Identifiers:
RLE_PR_139_01_01s_01
Is Part Of:
Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1996
Solid State Physics, Electronics and Optics
Materials and Fabrication
Compound Semiconductor Materials and Devices
Series/Report no.:
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 139
Keywords:
Compound Semiconductor Materials, Compound Semiconductor Devices, Epitaxy-on-Electronics Integration Technology, Monolithic Enhancement of MESFET Electronics with Resonant Tunneling Diodes, Hyperthermal Molecular Beam Dry Etching of III-V Compound Semiconductors, InGaAsP/GaAs Light Emitting Diodes Monolithically Integrated on GaAs VLSI Electronics, The OPTOCHIP Project, Other Multi-group OEIC Chips, Monolithic Integration of Vertical-Cavity Surface-Emitting Laser Diodes on GaAs VLSI Electronics, Monolithic Integration of In-Plane, Surface-Emitting Laser Diodes on GaAs VLSI Electronics, Metal-Semiconductor-Metal Photodetectors from a GaAs VLSI Process, Monolithic Integration of 1550 nm Photodetectors on GaAs Transimpedance Amplifier Chips, Microwave Characterization of Optoelectronic Devices, Reduced-Temperature Growth of Distributed Bragg Relectors of Self-Electrooptic-Effect Devices on GaAs on GaAs VLSI Electronics, Reduced-Temperature Growth of Monolithic Integration of Self-Electrooptic-Effect Devices on GaAs on GaAs VLSI Electronics, Compact Integrated Optics Structures for Monolithic Integration, Integrated Normal Incidence Single-Band Quantum-Well Intersubband Photodetectors, Integrated Normal Incidence Dual-Band Quantum-Well Intersubband Photodetectors, Figures of Merit for Quantum-Well Intersubband Photodetector Focal-Plane Arrays in Different Operating Regimes
Show full item metadata
