Nanostructures Technology, Research, and Applications

Home
→
Research Laboratory for Electronics (RLE)
→
RLE Progress Reports
→
RLE Progress Report, No. 140 (1997)
→
View Item

Nanostructures Technology, Research, and Applications

Author: Smith, Henry I.; Mondol, Mark K.; Goodberlet, James G.; Bernshteyn, Alex; Ferrera, Juan; Carter, David J.; Schweizer, Mark R.; Daley, James M.; Lim, Michael H. Y.; Moon, Euclid E.; Djohmehri, Ihsan; Savas, Timothy A.; Carter, James M.; Murphy, Edward R.; Everett, Patrick N.; Lee, Jawoong; Farhoud, Maya S.; Fleming, Robert C., Jr.; Schattenburg, Mark L.; Ross, Caroline A.; Youcef-Toumi, Kamal; Bae, Jungmok M.; Hwang, M.; Jackson, Keith M.; Lee, Zachary K.; Antoniadis, Dimitri A.; Lochtefeld, Anthony; Sokolinski, Ilia; Chung, James E.; Meinhold, Mitchell W.; Berman, David B.; Ashoori, Raymond C.; Fan, Shanhui; Foresi, James S.; Steinmeyer, Günter; Thoen, Erik R.; Villeneuve, Pierre R.; Ippen, Erich P.; Joannopoulos, John D.; Kimerling, Lionel C.; Qi, Minghao; Damask, Jay N.; Khan, Mohammed Jalal; Koontz, Elisabeth M.; Murphy, Thomas E.; Kolodziejski, Leslie A.; Haus, Hermann A.; van Beek, Joost; Hindle, P.; Porter, Jeannie M.; Prentiss, Jane D.; Sisson, Robert D.; Canizares, Claude R.; Franke, Andrea E.; Pflug, David; Akinwande, Akintunde I.; Bozler, Carl; Rana, Farhan; Marley, Elisabeth A.; Ram, Rajeev J.

Citable URI: http://hdl.handle.net/1721.1/57421

Publisher: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)

Date Issued: 1997-01-01

Description:

Contains reports on twenty-four research projects and a list of publications.

URI: http://hdl.handle.net/1721.1/57421

Other Identifiers: RLE_PR_140_01_02s_04

Is Part Of: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1997
Solid State Physics, Electronics and Optics
Quantum-Effect Devices
Nanostructures Technology, Research, and Applications

Series/Report no.: Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 140

Keywords: Nanostructures Technology, Nanostructures Research, Nanostructures Applications, Scanning-Electron-Beam Lithography, Spatial-Phase-Locked Electron-Beam Lithography, X-Ray Nanolithography, Zone-Plate Based X-Ray Lithography, Deep-UV Projection Lithography, Improved Mask Technology for X-Ray Lithography, Robust, High-Precision Mask Alignment and X-ray Exposure System, Interferometric Lithography, Sub-100 nm Metrology Using Interferometrically Produced Fiducial Grids, Arrays of Nanomagnets for High-Density Information Storage, Design of Single-Mask 50 nm MOSFETs, Fabrication of Single-Mask 50 nm MOSFETs, CMOS Technology for 25 nm Channel Length, Fabrication of T-gate Devices Using X-ray Lithography, Single-Electron Transistor Research, One-Dimensional Photonic-Band-Gap Devices in SOI Waveguides, Three-dimensional Photonic Bandgap Structures, Design of an Integrated Channel-Dropping Filter in InP, Fabrication of an Integrated Channel-Dropping Filter in InP, Fabrication of an Integrated Optical Grating-Based Matched Filter for Fiber-Optic Communications, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-ray Spectroscopy, Super-smooth X-ray Reflection Gratings, Transmission Gratings as UV-blocking Filters for Neutral Atom Imaging, Submicrometer-Period Transmission Gratings for X-ray Spectroscopy, Submicrometer-Period Transmission Gratings for X-ray Interferometry, Submicrometer-Period Transmission Gratings for Atom-Beam Spectroscopy, Submicrometer-Period Transmission Gratings for Atom-Beam Interferometry, Field-Emitter-Array Flat-Panel Displays for Head-Mounted Applications, Development of High-Speed Distributed Feedback (DFB), Development of Distributed-Bragg Semiconductor Lasers

Show full item metadata