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dc.contributor.advisorTonio Buonassisi.en_US
dc.contributor.authorCastellanos Rodríguez, Sergioen_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Mechanical Engineering.en_US
dc.date.accessioned2014-07-11T21:07:58Z
dc.date.available2014-07-11T21:07:58Z
dc.date.copyright2014en_US
dc.date.issued2014en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/88385
dc.descriptionThesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2014.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 96-102).en_US
dc.description.abstractOne of the parameters with highest impact on photovoltaic module cost is manufacturing yield during solar cell production. Yield is, to a great extent, directly affected by the crystallization technique used to grow the substrate wafers due to its role in generating residual stresses that can lead to fracture upon wafer processing and handling. This thesis explores the nature, impact, and a method for quantifying residual stresses in silicon wafers used for solar cells. The combination of an infrared birefringence imaging technique along with a sectioning method is proposed as an approach to spatially resolve and decouple the in-plane residual stress components on four wafers originating from different growth methods. The suitability of this technique is verified, and recommendations for future expansion of this work are presented.en_US
dc.description.statementofresponsibilityby Sergio Castellanos Rodriguez.en_US
dc.format.extent102 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMechanical Engineering.en_US
dc.titleApplication of infrared birefringence imaging for measuring residual stress in multicrystalline, quasi-mono, dendritic web, and string ribbon silicon for solar cellsen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineering.en_US
dc.identifier.oclc881193224en_US


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