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GaN electronics for high-temperature applications

Author(s)
Yuan, Mengyang.
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Download1202001597-MIT.pdf (14.85Mb)
Alternative title
Gallium nitride electronics for high-temperature applications
Other Contributors
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Advisor
Tomás Palacios.
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MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided. http://dspace.mit.edu/handle/1721.1/7582
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Abstract
Gallium nitride is a promising candidate for high-temperature applications. However, despite the excellent performance shown by early high-temperature prototypes, several issues in traditional lateral AlGaN/GaN HEMTs could cause early degradation and failure under high-temperature operation (over 300°C). These include ohmic degradation, gate leakage, buffer leakage, and poor passivation. Besides, enhancement-mode HEMTs are preferred from the application point of view by reducing the circuit complexity and cost. At the same time, the two-dimensional electron gas induced by AlGaN/GaN heterostructures makes HEMTs be naturally depletion-mode devices. This thesis aims to demonstrate devices capable of high-temperature operation without extra cooling systems by combing gate injections transistors (GITs) with ion-implanted refractory metal contacts. The Si ion implantation in AlGaN/GaN heterostructures was comprehensively studied here regarding implantation conditions, activation annealing conditions, metallization schemes. A self-aligned gate-first process, together with etch-stop process, was developed and optimized to improve fabrication efficiency and device uniformity for large-scale integration. Basic logic building blocks, including inverters, NAND gate, NOR gate, SRAM, and ring oscillator, have been demonstrated and characterized at both room temperature and high temperature.
Description
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, February, 2020
 
Cataloged from PDF version of thesis.
 
Includes bibliographical references (pages 95-100).
 
Date issued
2020
URI
https://hdl.handle.net/1721.1/128350
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Publisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science.

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