dc.contributor.advisor | Tomás Palacios. | en_US |
dc.contributor.author | Yuan, Mengyang. | en_US |
dc.contributor.other | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. | en_US |
dc.date.accessioned | 2020-11-03T20:32:20Z | |
dc.date.available | 2020-11-03T20:32:20Z | |
dc.date.copyright | 2020 | en_US |
dc.date.issued | 2020 | en_US |
dc.identifier.uri | https://hdl.handle.net/1721.1/128350 | |
dc.description | Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, February, 2020 | en_US |
dc.description | Cataloged from PDF version of thesis. | en_US |
dc.description | Includes bibliographical references (pages 95-100). | en_US |
dc.description.abstract | Gallium nitride is a promising candidate for high-temperature applications. However, despite the excellent performance shown by early high-temperature prototypes, several issues in traditional lateral AlGaN/GaN HEMTs could cause early degradation and failure under high-temperature operation (over 300°C). These include ohmic degradation, gate leakage, buffer leakage, and poor passivation. Besides, enhancement-mode HEMTs are preferred from the application point of view by reducing the circuit complexity and cost. At the same time, the two-dimensional electron gas induced by AlGaN/GaN heterostructures makes HEMTs be naturally depletion-mode devices. This thesis aims to demonstrate devices capable of high-temperature operation without extra cooling systems by combing gate injections transistors (GITs) with ion-implanted refractory metal contacts. The Si ion implantation in AlGaN/GaN heterostructures was comprehensively studied here regarding implantation conditions, activation annealing conditions, metallization schemes. A self-aligned gate-first process, together with etch-stop process, was developed and optimized to improve fabrication efficiency and device uniformity for large-scale integration. Basic logic building blocks, including inverters, NAND gate, NOR gate, SRAM, and ring oscillator, have been demonstrated and characterized at both room temperature and high temperature. | en_US |
dc.description.statementofresponsibility | by Mengyang Yuan. | en_US |
dc.format.extent | 100 pages | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Massachusetts Institute of Technology | en_US |
dc.rights | MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided. | en_US |
dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | en_US |
dc.subject | Electrical Engineering and Computer Science. | en_US |
dc.title | GaN electronics for high-temperature applications | en_US |
dc.title.alternative | Gallium nitride electronics for high-temperature applications | en_US |
dc.type | Thesis | en_US |
dc.description.degree | S.M. | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.identifier.oclc | 1202001597 | en_US |
dc.description.collection | S.M. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science | en_US |
dspace.imported | 2020-11-03T20:32:19Z | en_US |
mit.thesis.degree | Master | en_US |
mit.thesis.department | EECS | en_US |