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Mortality Dependence of Cu Dual Damascene Interconnects on Adjacent Segments
(2004-01)
Electromigration experiments have been carried out on straight interconnects that have single vias at each end, and are divided into two segments by a via in the center ("dotted-I" structures). For dotted-i structures in ...
Processing, Structure, Properties, and Reliability of Metals for Microsystems
(2002-01)
Research on the processing, structure, properties and reliability of metal films and metallic microdevice elements is reviewed. Recent research has demonstrated that inelastic deformation mechanisms of metallic films and ...
Growth and Properties of (001)-oriented Pb(Zr₀.₅₂Ti₀.₄₈)O₃/LaNiO₃ Films on Si(001) Substrates with TiN Buffer Layers
(2004-01)
Pulsed laser deposition has been used to grow Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT)/LaNiO₃ (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO₂-coated Si(001) substrates, using TiN buffer layers. ...
Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111)
(2004-01)
AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium pre-treatments have been ...
Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects
(2004-01)
The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to underlaying leads ...
Atomistic Simulations of Metallic Cluster Coalescence
(2002-01)
A new computational method is introduced to investigate the stresses developed in the island-coalescence stage of polycrystalline film formation during deposition. The method uses molecular dynamics to examine the behavior ...
Carbon Nanotube Growth Using Ni Catalyst in Different Layouts
(2005-01)
Vertically aligned carbon nanotubes have been grown using Ni as catalyst by plasma enhanced chemical vapor deposition system (PECVD) in various pre-patterned substrates. Ni was thermally evaporated on silicon substrates ...
Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method
(2005-01)
Uniformly distributed ZnO nanorods with diameter 70-100 nm and 1-2μm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the ...
Investigation of the Fundamental Reliability Unit for Cu Dual-Damascene Metallization
(2002-01)
An investigation has been carried out to determine the fundamental reliability unit of copper dual-damascene metallization. Electromigration experiments have been carried out on straight via-to-via interconnects in the ...
Observation of Joule Heating-Assisted Electromigration Failure Mechanisms for Dual Damascene Cu/SiO₂ Interconnects
(2003-01)
Failure mechanisms observed in electromigration (EM) stressed dual damascene Cu/SiO₂ interconnects trees were studied and simulated. Failure sites with âmelt patch’ or âcrater’ are common for test structures in the top ...