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Now showing items 11-20 of 21
Reliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees
(2003-01)
Electromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried out. Like Al-based ...
Length Effects on the Reliability of Dual-Damascene Cu Interconnects
(2002-01)
The effects of interconnect length on the reliability of dual-damascene Cu metallization have been investigated. As in Al-based interconnects, the lifetimes of Cu lines increase with decreasing length. However, unlike ...
Characterization and Modeling of Stress Evolution During Nickel Silicides Formation
(2003-01)
An curvature measurement technique was used to characterize the stress evolution during reaction of a Ni film and a silicon substrate to form nickel silicide. Stress changes were measured at each stage of the silicide ...
Metallic Cluster Coalescence: Molecular Dynamics Simulations of Boundary Formation
(2003-01)
During the evaporative deposition of polycrystalline thin films, the development of a tensile stress at small film thicknesses is associated with island coalescence. Several continuum models exist to describe the magnitude ...
Effects of Applied Loads, Effective Contact Area and Surface Roughness on the Dicing Yield of 3D Cu Bonded Interconnects
(2006-01)
Bonded copper interconnects were created using thermo-compression bonding and the dicing yield was used as an indication of the bond quality. SEM images indicated that the Cu was plastically deformed. Our experimental and ...
Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits
(2005-01)
Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures ...
The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates
(2005-01)
The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN ...
Growth of ZnO Nanorods on GaN Using Aqueous Solution Method
(2005-01)
Uniformly distributed ZnO nanorods with
diameter 80-120 nm and 1-2µm long have been
successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and ...
The Influence of Adjacent Segment on the Reliability of Cu Dual Damascene Interconnects
(2005-01)
Three terminal âdotted-I’ interconnect structures, with vias at both ends and an additional via in the middle, were tested under various test conditions. Mortalities (failures) were found in right segments with jL value ...
Research on Polycrystalline Films for Micro- and Nano-Systems
(2003-01)
Polycrystalline films are used in a wide array of micro- and nano-scale devices, for electronic, mechanical, magnetic, photonic and chemical functions. Increasingly, the properties, performance, and reliability of films ...