Browsing MIT Open Access Articles by Subject "n-MOSFET"
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Gate-all-around n-MOSFETs with uniaxial tensile strain-induced performance enhancement scalable to sub-10-nm nanowire diameter
(Institute of Electrical and Electronics Engineers, 2009-03)The effects of high-level uniaxial tensile strain on the performance of gate-all-around (GAA) Si n-MOSFETs are investigated for nanowire (NW) diameters down to 8 nm. Suspended strained-Si NWs with ~2-GPa uniaxial tension ...