Gate-all-around n-MOSFETs with uniaxial tensile strain-induced performance enhancement scalable to sub-10-nm nanowire diameter
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The effects of high-level uniaxial tensile strain on the performance of gate-all-around (GAA) Si n-MOSFETs are investigated for nanowire (NW) diameters down to 8 nm. Suspended strained-Si NWs with ~2-GPa uniaxial tension were realized by nanopatterning-induced unilateral relaxation of ultrathin-body 30% strained-Si-directly-on-insulator substrates. Based on these NWs, GAA strained-Si n-MOSFETs were fabricated with a Si thickness of ~8 nm and NW widths in the range of 50 nm down to 8 nm. The GAA strained-Si MOSFETs show excellent subthreshold swing and cutoff behavior, and approximately two times current drive and intrinsic transconductance enhancement compared to similar unstrained Si devices.
Date issued
2009-03Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers
Citation
Hashemi, P., L. Gomez, and J.L. Hoyt. “Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter.” Electron Device Letters, IEEE 30.4 (2009): 401-403. © 2009 IEEE
Version: Final published version
ISSN
0741-3106
Keywords
uniaxial tensile, strained Si, nanowire (NW), n-MOSFET, Gate all around (GAA)