Growth and characterization of mid-infrared phosphide-based semiconductor diode lasers

Author(s)
Chi, Pei-Chun
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Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
Advisor
Leslie A. Kolodziejski and Silvija Gradečak.
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Abstract
A diode laser emitting at mid-infrared wavelength (2~5 pm) is an ideal light source for petrochemical or industrial-important gas sensing. Antimony-based III-V compound semiconductor material is the most prominent pseudomorphic epitaxy candidate for this application. However, phosphide-based material not only has the potential to reach this wavelength utilizing a strained active region but also takes the advantage of sophisticated material study from telecommunication technology. This thesis presents the realization of a 1.97 pm emission ridge waveguide laser in design, fabrication, and characterization phases. Ino.85 Gao.15As/Alo.1Ino.4 8Gao.42As strained multiple quantum wells structures have being built on InP substrates. Structural, optical, and electrical properties of the material have being tested and summarized.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010.
 
Cataloged from PDF version of thesis.
 
Includes bibliographical references (p. 89-91).
 
Date issued
2010
URI
http://hdl.handle.net/1721.1/62685
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Publisher
Massachusetts Institute of Technology
Keywords
Materials Science and Engineering.
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