| dc.contributor.advisor | Leslie A. Kolodziejski and Silvija Gradečak. | en_US |
| dc.contributor.author | Chi, Pei-Chun | en_US |
| dc.contributor.other | Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. | en_US |
| dc.date.accessioned | 2011-05-09T15:19:39Z | |
| dc.date.available | 2011-05-09T15:19:39Z | |
| dc.date.copyright | 2010 | en_US |
| dc.date.issued | 2010 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/62685 | |
| dc.description | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010. | en_US |
| dc.description | Cataloged from PDF version of thesis. | en_US |
| dc.description | Includes bibliographical references (p. 89-91). | en_US |
| dc.description.abstract | A diode laser emitting at mid-infrared wavelength (2~5 pm) is an ideal light source for petrochemical or industrial-important gas sensing. Antimony-based III-V compound semiconductor material is the most prominent pseudomorphic epitaxy candidate for this application. However, phosphide-based material not only has the potential to reach this wavelength utilizing a strained active region but also takes the advantage of sophisticated material study from telecommunication technology. This thesis presents the realization of a 1.97 pm emission ridge waveguide laser in design, fabrication, and characterization phases. Ino.85 Gao.15As/Alo.1Ino.4 8Gao.42As strained multiple quantum wells structures have being built on InP substrates. Structural, optical, and electrical properties of the material have being tested and summarized. | en_US |
| dc.description.statementofresponsibility | by Pei-Chun Chi. | en_US |
| dc.format.extent | 91 p. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Massachusetts Institute of Technology | en_US |
| dc.rights | M.I.T. theses are protected by
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission. | en_US |
| dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | en_US |
| dc.subject | Materials Science and Engineering. | en_US |
| dc.title | Growth and characterization of mid-infrared phosphide-based semiconductor diode lasers | en_US |
| dc.type | Thesis | en_US |
| dc.description.degree | S.M. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | |
| dc.identifier.oclc | 714374473 | en_US |
