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Waveguide-coupled detector in zero-change complementary metal–oxide–semiconductor
| dc.contributor.author | Alloatti, Luca | |
| dc.contributor.author | Srinivasan, Srinivasan A. | |
| dc.contributor.author | Orcutt, Jason Scott | |
| dc.contributor.author | Ram, Rajeev J. | |
| dc.date.accessioned | 2016-01-27T17:09:21Z | |
| dc.date.available | 2016-01-27T17:09:21Z | |
| dc.date.issued | 2015-07 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/101002 | |
| dc.description.abstract | We report a waveguide-coupled photodetector realized in a standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The photodetector exploits carrier generation in the silicon-germanium normally utilized as stressor in pFETs. The measured responsivity and 3 dB bandwidth are of 0.023 A/W at a wavelength of 1180 nm and 32 GHz at −1 V bias (18 GHz at 0 V bias). The dark current is less than 10 pA and the dynamic range is larger than 60 dB. | en_US |
| dc.description.sponsorship | United States. Defense Advanced Research Projects Agency. Photonically Optimized Embedded Microprocessors Program (Award HR0011-11-C-0100) | en_US |
| dc.description.sponsorship | United States. Defense Advanced Research Projects Agency. Photonically Optimized Embedded Microprocessors Program (Contract HR0011-11-9-0009) | en_US |
| dc.language.iso | en_US | |
| dc.relation.isversionof | http://dx.doi.org/10.1063/1.4927393 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | MIT web domain | en_US |
| dc.title | Waveguide-coupled detector in zero-change complementary metal–oxide–semiconductor | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Alloatti, L., S. A. Srinivasan, J. S. Orcutt, and R. J. Ram. “Waveguide-Coupled Detector in Zero-Change Complementary Metal–oxide–semiconductor.” Applied Physics Letters 107, no. 4 (July 27, 2015): 041104. © 2015 AIP Publishing LLC | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Research Laboratory of Electronics | en_US |
| dc.contributor.mitauthor | Alloatti, Luca | en_US |
| dc.contributor.mitauthor | Srinivasan, Srinivasan A. | en_US |
| dc.contributor.mitauthor | Orcutt, Jason Scott | en_US |
| dc.contributor.mitauthor | Ram, Rajeev J. | en_US |
| dc.relation.journal | Applied Physics Letters | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Alloatti, L.; Srinivasan, S. A.; Orcutt, J. S.; Ram, R. J. | en_US |
| dc.identifier.orcid | https://orcid.org/0000-0002-1245-4179 | |
| dc.identifier.orcid | https://orcid.org/0000-0003-0420-2235 | |
| dspace.mitauthor.error | true | |
| mit.license | PUBLISHER_POLICY | en_US |
