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dc.contributor.authorZhou, Jiawei
dc.contributor.authorLiao, Bolin
dc.contributor.authorQiu, Bo
dc.contributor.authorHuberman, Samuel C.
dc.contributor.authorEsfarjani, Keivan
dc.contributor.authorDresselhaus, Mildred
dc.contributor.authorChen, Gang
dc.date.accessioned2016-08-10T16:15:31Z
dc.date.available2016-08-10T16:15:31Z
dc.date.issued2015-11
dc.date.submitted2015-06
dc.identifier.issn0027-8424
dc.identifier.issn1091-6490
dc.identifier.urihttp://hdl.handle.net/1721.1/103880
dc.description.abstractAlthough the thermoelectric figure of merit zT above 300 K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time to our knowledge, success in first-principles computation of the phonon drag effect-a coupling phenomenon between electrons and nonequilibrium phonons-in heavily doped region and its optimization to enhance the Seebeck coefficient while reducing the phonon thermal conductivity by nanostructuring. Our simulation quantitatively identifies the major phonons contributing to the phonon drag, which are spectrally distinct from those carrying heat, and further reveals that although the phonon drag is reduced in heavily doped samples, a significant contribution to Seebeck coefficient still exists. An ideal phonon filter is proposed to enhance zT of silicon at room temperature by a factor of 20 to ∼0.25, and the enhancement can reach 70 times at 100 K. This work opens up a new venue toward better thermoelectrics by harnessing nonequilibrium phonons.en_US
dc.description.sponsorshipUnited States. Air Force Office of Scientific Research (Multidisciplinary Research Program of the University Research Initiative, AFOSR MURI FA9550-10-1-0533)en_US
dc.description.sponsorshipUnited States. Dept. of Energy (S3TEC Energy Frontier Research Center, Award DE-SC0001299/DE-FG02-09ER46577)en_US
dc.language.isoen_US
dc.publisherNational Academy of Sciences (U.S.)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1073/pnas.1512328112en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourcePNASen_US
dc.titleAb initio optimization of phonon drag effect for lower-temperature thermoelectric energy conversionen_US
dc.typeArticleen_US
dc.identifier.citationZhou, Jiawei, Bolin Liao, Bo Qiu, Samuel Huberman, Keivan Esfarjani, Mildred S. Dresselhaus, and Gang Chen. "Ab initio optimization of phonon drag effect for lower-temperature thermoelectric energy conversion." Proceedings of the National Academy of Sciences of the United States of America 112:48 (December 2015), pp.14777–14782.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.approverChen, Gangen_US
dc.contributor.mitauthorZhou, Jiaweien_US
dc.contributor.mitauthorLiao, Bolinen_US
dc.contributor.mitauthorQiu, Boen_US
dc.contributor.mitauthorHuberman, Samuel C.en_US
dc.contributor.mitauthorDresselhaus, Mildreden_US
dc.contributor.mitauthorChen, Gangen_US
dc.relation.journalProceedings of the National Academy of Sciencesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsZhou, Jiawei; Liao, Bolin; Qiu, Bo; Huberman, Samuel; Esfarjani, Keivan; Dresselhaus, Mildred S.; Chen, Gangen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-0898-0803
dc.identifier.orcidhttps://orcid.org/0000-0001-8492-2261
dc.identifier.orcidhttps://orcid.org/0000-0003-0865-8096
dc.identifier.orcidhttps://orcid.org/0000-0002-3968-8530
dc.identifier.orcidhttps://orcid.org/0000-0002-9872-5688
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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