Evidence for ferromagnetic coupling at the doped topological insulator/ferrimagnetic insulator interface
Author(s)
Liu, Wenqing; He, Liang; Zhou, Yan; Murata, Koichi; Jiang, Ying; Wang, Yong; Xu, Yongbing; Zhang, Rong; Wang, Kang. L.; Onbasli, Mehmet C.; Ross, Caroline A; ... Show more Show less
DownloadRoss_Evidence for.pdf (1.569Mb)
PUBLISHER_CC
Publisher with Creative Commons License
Creative Commons Attribution
Terms of use
Metadata
Show full item recordAbstract
One of the major obstacles of the magnetic topological insulators (TIs) impeding their practical use is the low Curie temperature (T[subscript c] ). Very recently, we have demonstrated the enhancement of the magnetic ordering in Cr-doped Bi₂Se₃ by means of proximity to the high-T[subscript c] ferrimagnetic insulator (FMI) Y₃Fe₅O₁₂ and found a large and rapidly decreasing penetration depth of the proximity effect, suggestive of a different carrier propagation process near the TI surface. Here we further present a study of the interfacial magnetic interaction of this TI/FMI heterostrucutre. The synchrotron-based X-ray magnetic circular dichroism (XMCD) technique was used to probe the nature of the exchange coupling of the Bi[subscript 2-x] Cr [subscript x] Se₃/Y₃Fe₅O₁₂ interface. We found that the Bi[subscript 2-x] Cr [subscript x] Se₃ grown on Y₃Fe₅O₁₂ (111) predominately contains Cr ³⁺ cations, and the spin direction of the Cr³⁺ is aligned parallel to that of tetrahedral Fe³⁺ of the YIG, revealing a ferromagnetic exchange coupling between the Bi [subscript 2-x] Cr [subscript x] Se₃ and the Y₃Fe₅O₁₂.
Date issued
2016-03Department
Massachusetts Institute of Technology. Department of Materials Science and EngineeringJournal
AIP Advances
Publisher
American Institute of Physics (AIP)
Citation
Liu, Wenqing et al. “Evidence for Ferromagnetic Coupling at the Doped Topological Insulator/ferrimagnetic Insulator Interface.” AIP Advances 6, 5 (May 2016): 055813 © 2016 Author(s)
Version: Final published version
ISSN
2158-3226