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dc.contributor.authorWang, Mary X.
dc.contributor.authorSeo, Soyoung E.
dc.contributor.authorFleischman, Dagny
dc.contributor.authorLee, Byeongdu
dc.contributor.authorKim, Youngeun
dc.contributor.authorAtwater, Harry A.
dc.contributor.authorMirkin, Chad A.
dc.contributor.authorGabrys, Paul Anthony
dc.contributor.authorMacfarlane, Robert J
dc.date.accessioned2017-10-23T18:44:01Z
dc.date.available2017-10-23T18:44:01Z
dc.date.issued2016-12
dc.date.submitted2016-09
dc.identifier.issn1936-0851
dc.identifier.issn1936-086X
dc.identifier.urihttp://hdl.handle.net/1721.1/111961
dc.description.abstractThe programmability of DNA makes it an attractive structure-directing ligand for the assembly of nanoparticle (NP) superlattices in a manner that mimics many aspects of atomic crystallization. However, the synthesis of multilayer single crystals of defined size remains a challenge. Though previous studies considered lattice mismatch as the major limiting factor for multilayer assembly, thin film growth depends on many interlinked variables. Here, a more comprehensive approach is taken to study fundamental elements, such as the growth temperature and the thermodynamics of interfacial energetics, to achieve epitaxial growth of NP thin films. Both surface morphology and internal thin film structure are examined to provide an understanding of particle attachment and reorganization during growth. Under equilibrium conditions, single crystalline, multilayer thin films can be synthesized over 500 × 500 μm² areas on lithographically patterned templates, whereas deposition under kinetic conditions leads to the rapid growth of glassy films. Importantly, these superlattices follow the same patterns of crystal growth demonstrated in atomic thin film deposition, allowing these processes to be understood in the context of well-studied atomic epitaxy and enabling a nanoscale model to study fundamental crystallization processes. Through understanding the role of epitaxy as a driving force for NP assembly, we are able to realize 3D architectures of arbitrary domain geometry and size.en_US
dc.description.sponsorshipUnited States. Air Force Office of Scientific Research (AFOSR FA9550-11-1-0275)en_US
dc.description.sponsorshipUnited States. Air Force Office of Scientific Research (FA9550-12-1-0280)en_US
dc.description.sponsorshipUnited States. Department of Defense (N00014-15-1-0043)en_US
dc.description.sponsorshipUnited States. Department of Energy (Grant DE-SC0000989-0002)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Award DMR-1121262)en_US
dc.language.isoen_US
dc.publisherAmerican Chemical Society (ACS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/acsnano.6b06584en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceACSen_US
dc.titleEpitaxy: Programmable Atom Equivalentsen_US
dc.typeArticleen_US
dc.identifier.citationWang, Mary X. et al. "Epitaxy: Programmable Atom Equivalents" ACS Nano, 11, 1 (December 2016): 180–185 © 2016 American Chemical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.mitauthorGabrys, Paul Anthony
dc.contributor.mitauthorMacfarlane, Robert J
dc.relation.journalACS Nanoen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsWang, Mary X.; Seo, Soyoung E.; Gabrys, Paul A.; Fleischman, Dagny; Lee, Byeongdu; Kim, Youngeun; Atwater, Harry A.; Macfarlane, Robert J.; Mirkin, Chad A.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-7376-4162
dc.identifier.orcidhttps://orcid.org/0000-0001-9449-2680
mit.licensePUBLISHER_POLICYen_US


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