Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures
Author(s)
Sipahigil, Alp; Evans, Ruffin E.; Sukachev, Denis D.; Nguyen, Christian T.; Pacheco, Jose L.; Camacho, Ryan M.; Bielejec, Edward S.; Lukin, Mikhail D.; Schroder, Tim; Trusheim, Matthew E; Walsh, Michael E; Li, Luozhou; Zheng, Jiabao; Schukraft, Marco; Englund, Dirk R.; ... Show more Show less
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The controlled creation of defect centre - nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ∼32 nm lateral precision and < 50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ∼2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ∼51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ∼1.4 times the natural linewidth. This method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.
Date issued
2017-05Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
Nature Communications
Publisher
Nature Publishing Group
Citation
Schröder, Tim et al. “Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures.” Nature Communications 8 (May 2017): 15376 © 2017 The Author(s)
Version: Final published version
ISSN
2041-1723