dc.contributor.author | Kamboj, Varun S. | |
dc.contributor.author | Braeuninger-Weimer, Philipp | |
dc.contributor.author | Jessop, David S. | |
dc.contributor.author | Singh, Angadjit | |
dc.contributor.author | Sibik, Juraj | |
dc.contributor.author | Ren, Yuan | |
dc.contributor.author | Hofmann, Stephan | |
dc.contributor.author | Zeitler, J. Axel | |
dc.contributor.author | Beere, Harvey E. | |
dc.contributor.author | Ritchie, David A. | |
dc.contributor.author | Kidambi, Piran Ravichandran | |
dc.date.accessioned | 2018-04-09T20:01:10Z | |
dc.date.available | 2018-04-09T20:01:10Z | |
dc.date.issued | 2016-02 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/114643 | |
dc.description.abstract | We report the characterization of centimeter sized graphene field-effect transistors with ionic gating which enables active frequency and amplitude modulation of terahertz (THz) radiation. Chemical vapour deposited graphene with different grain sizes were studied using THz time-domain spectroscopy. We demonstrate that the plasmonic resonances intrinsic to graphene can be tuned over a wide range of THz frequencies by engineering the grain size of the graphene. Further frequency tuning of the resonance, up to ∼65 GHz, is achieved by electrostatic doping via ionic gating. These results present the first demonstration of tuning the intrinsic plasmonic resonances in graphene. | en_US |
dc.description.sponsorship | Engineering and Physical Sciences Research Council (Grant EP/J017671/1) | en_US |
dc.description.sponsorship | Engineering and Physical Sciences Research Council (Grant EP/K016636/1-GRAPHTED) | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1117/12.2209724 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | SPIE | en_US |
dc.title | Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Kamboj, Varun S., et al. "Low-Bias Gate Tunable Terahertz Plasmonic Signatures in Chemical Vapour Deposited Graphene of Varying Grain Size." Proceedings Volume 9747, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX, 13-18 February, 2016, San Francisco, California, edited by Laurence P. Sadwick and Tianxin Yang, 2016, p. 974707. © 2016 SPIE | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Mechanical Engineering | en_US |
dc.contributor.mitauthor | Kidambi, Piran Ravichandran | |
dc.relation.journal | Proceedings Volume 9747, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX; | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/ConferencePaper | en_US |
eprint.status | http://purl.org/eprint/status/NonPeerReviewed | en_US |
dc.date.updated | 2018-03-16T15:58:20Z | |
dspace.orderedauthors | Kamboj, Varun S.; Braeuninger-Weimer, Philipp; Kidambi, Piran R.; Jessop, David S.; Singh, Angadjit; Sibik, Juraj; Ren, Yuan; Hofmann, Stephan; Zeitler, J. Axel; Beere, Harvey E.; Ritchie, David A. | en_US |
dspace.embargo.terms | N | en_US |
dc.identifier.orcid | https://orcid.org/0000-0003-1546-5014 | |
mit.license | PUBLISHER_POLICY | en_US |