A multi-state memory device based on the unidirectional spin Hall magnetoresistance
Author(s)
Gambardella, Pietro; Avci, Can Onur; Mann, Maxwell; Tan, Aik Jun; Beach, Geoffrey Stephen
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We report on a memory device concept based on the recently discovered unidirectional spin Hall magnetoresistance (USMR), which can store multiple bits of information in a single ferromagnetic heterostructure. We show that the USMR with possible contribution of Joule heating-driven magnetothermal effects in ferromagnet/normal metal/ferromagnet (FM/NM/FM) trilayers gives rise to four different 2nd harmonic resistance levels corresponding to four magnetization states (¶, ⇄, ⇆, ¶) in which the system can be found. Combined with the possibility of controlling the individual FMs by spin-orbit torques, we propose that it is possible to build an all-electrical lateral two-terminal multi-bit-per-cell memory device.
Date issued
2017-05Department
Massachusetts Institute of Technology. Department of Materials Science and EngineeringJournal
Applied Physics Letters
Publisher
AIP Publishing
Citation
Avci, Can Onur et al. “A Multi-State Memory Device Based on the Unidirectional Spin Hall Magnetoresistance.” Applied Physics Letters 110, 20 (May 2017): 203506 © 2017 Author(s)
Version: Final published version
ISSN
0003-6951
1077-3118