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dc.contributor.authorLiu, Te Huan
dc.contributor.authorZhou, Jiawei
dc.contributor.authorLi, Mingda
dc.contributor.authorDing, Zhiwei
dc.contributor.authorSong, Qichen
dc.contributor.authorFu, Liang
dc.contributor.authorChen, Gang
dc.date.accessioned2018-10-12T16:39:56Z
dc.date.available2018-10-12T16:39:56Z
dc.date.issued2018-01
dc.date.submitted2017-09
dc.identifier.issn0027-8424
dc.identifier.issn1091-6490
dc.identifier.urihttp://hdl.handle.net/1721.1/118460
dc.description.abstractRecent advancements in thermoelectric materials have largely benefited from various approaches, including band engineering and defect optimization, among which the nanostructuring technique presents a promising way to improve the thermoelectric figure of merit (zT) by means of reducing the characteristic length of the nanostructure, which relies on the belief that phonons’ mean free paths (MFPs) are typically much longer than electrons’. Pushing the nanostructure sizes down to the length scale dictated by electron MFPs, however, has hitherto been overlooked as it inevitably sacrifices electrical conduction. Here we report through ab initio simulations that Dirac material can overcome this limitation. The monotonically decreasing trend of the electron MFP allows filtering of long-MFP electrons that are detrimental to the Seebeck coefficient, leading to a dramatically enhanced power factor. Using SnTe as a material platform, we uncover this MFP filtering effect as arising from its unique nonparabolic Dirac band dispersion. Room-temperature zT can be enhanced by nearly a factor of 3 if one designs nanostructures with grain sizes of ∼10 nm. Our work broadens the scope of the nanostructuring approach for improving the thermoelectric performance, especially for materials with topologically nontrivial electronic dynamics. Keywords: Dirac material; electrom mean-free-path filtering; thermoelectrics; nanostructuring approach; electron-phonon interactionsen_US
dc.publisherNational Academy of Sciences (U.S.)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1073/PNAS.1715477115en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourcePNASen_US
dc.titleElectron mean-free-path filtering in Dirac material for improved thermoelectric performanceen_US
dc.typeArticleen_US
dc.identifier.citationLiu, Te-Huan et al. “Electron Mean-Free-Path Filtering in Dirac Material for Improved Thermoelectric Performance.” Proceedings of the National Academy of Sciences 115, 5 (January 2018): 879–884 © 2018 National Academy of Sciencesen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Laboratory for Nuclear Scienceen_US
dc.contributor.mitauthorLiu, Te Huan
dc.contributor.mitauthorZhou, Jiawei
dc.contributor.mitauthorLi, Mingda
dc.contributor.mitauthorDing, Zhiwei
dc.contributor.mitauthorSong, Qichen
dc.contributor.mitauthorFu, Liang
dc.contributor.mitauthorChen, Gang
dc.relation.journalProceedings of the National Academy of Sciencesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2018-09-26T12:01:13Z
dspace.orderedauthorsLiu, Te-Huan; Zhou, Jiawei; Li, Mingda; Ding, Zhiwei; Song, Qichen; Liao, Bolin; Fu, Liang; Chen, Gangen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-1157-8540
dc.identifier.orcidhttps://orcid.org/0000-0002-9872-5688
dc.identifier.orcidhttps://orcid.org/0000-0002-7055-6368
dc.identifier.orcidhttps://orcid.org/0000-0002-2612-7750
dc.identifier.orcidhttps://orcid.org/0000-0002-1090-4068
dc.identifier.orcidhttps://orcid.org/0000-0002-8803-1017
mit.licensePUBLISHER_POLICYen_US


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