| Title: | 6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002 |
| Author: | Del Alamo, Jesus; Tuller, Harry L. |
| Issue Date: | 2002-12 |
| Abstract: | The physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Emphasis on physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling outlined. Includes device characterization projects and device design project. |
| URI: | http://hdl.handle.net/1721.1/46331 |
| Other Identifiers: | 6.720J-Fall2002 |
| Other Identifiers: | 6.720J 3.43J IMSCP-MD5-d47580483441c18496fb0c64e87bdaab |
| Keywords: | integrated microelectronic devices, physics, silicon, circuit, semiconductor, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, bipolar junction transistor, energy band diagram, short-channel MOSFET, device characterization, device design, 6.720J, 3.43J, 6.720, 3.43, Microelectronics, 141001, Electrical, Electronics and Communications Engineering |
| Files | Size | Format |
|---|---|---|
| 6-720JFall-2002 ... l2002/CourseHome/index.htm | 15.55Kb | text/html |
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