6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002

Title:	6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002
Author:	Del Alamo, Jesus; Tuller, Harry L.
Issue Date:	2002-12
Abstract:	The physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Emphasis on physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling outlined. Includes device characterization projects and device design project.
URI:	http://hdl.handle.net/1721.1/46331
Other Identifiers:	6.720J-Fall2002
Other Identifiers:	6.720J 3.43J IMSCP-MD5-d47580483441c18496fb0c64e87bdaab
Keywords:	integrated microelectronic devices, physics, silicon, circuit, semiconductor, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, bipolar junction transistor, energy band diagram, short-channel MOSFET, device characterization, device design, 6.720J, 3.43J, 6.720, 3.43, Microelectronics, 141001, Electrical, Electronics and Communications Engineering

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