| dc.contributor.author | Del Alamo, Jesus | en_US |
| dc.contributor.author | Tuller, Harry L. | en_US |
| dc.coverage.temporal | Fall 2002 | en_US |
| dc.date.issued | 2002-12 | |
| dc.identifier | 6.720J-Fall2002 | |
| dc.identifier | local: 6.720J | |
| dc.identifier | local: 3.43J | |
| dc.identifier | local: IMSCP-MD5-d47580483441c18496fb0c64e87bdaab | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/46331 | |
| dc.description.abstract | The physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Emphasis on physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling outlined. Includes device characterization projects and device design project. | en_US |
| dc.language | en-US | en_US |
| dc.rights.uri | Usage Restrictions: This site (c) Massachusetts Institute of Technology 2003. Content within individual courses is (c) by the individual authors unless otherwise noted. The Massachusetts Institute of Technology is providing this Work (as defined below) under the terms of this Creative Commons public license ("CCPL" or "license"). The Work is protected by copyright and/or other applicable law. Any use of the work other than as authorized under this license is prohibited. By exercising any of the rights to the Work provided here, You (as defined below) accept and agree to be bound by the terms of this license. The Licensor, the Massachusetts Institute of Technology, grants You the rights contained here in consideration of Your acceptance of such terms and conditions. | en_US |
| dc.subject | integrated microelectronic devices | en_US |
| dc.subject | physics | en_US |
| dc.subject | silicon | en_US |
| dc.subject | circuit | en_US |
| dc.subject | semiconductor | en_US |
| dc.subject | p-n junction | en_US |
| dc.subject | metal-oxide semiconductor structure | en_US |
| dc.subject | metal-semiconductor junction | en_US |
| dc.subject | MOS field-effect transistor | en_US |
| dc.subject | bipolar junction transistor | en_US |
| dc.subject | energy band diagram | en_US |
| dc.subject | short-channel MOSFET | en_US |
| dc.subject | device characterization | en_US |
| dc.subject | device design | en_US |
| dc.subject | 6.720J | en_US |
| dc.subject | 3.43J | en_US |
| dc.subject | 6.720 | en_US |
| dc.subject | 3.43 | en_US |
| dc.subject | Microelectronics | en_US |
| dc.title | 6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002 | en_US |
| dc.title.alternative | Integrated Microelectronic Devices | en_US |
