Show simple item record

6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002

dc.contributor.authorDel Alamo, Jesusen_US
dc.contributor.authorTuller, Harry L.en_US
dc.coverage.temporalFall 2002en_US
dc.date.issued2002-12
dc.identifier6.720J-Fall2002
dc.identifierlocal: 6.720J
dc.identifierlocal: 3.43J
dc.identifierlocal: IMSCP-MD5-d47580483441c18496fb0c64e87bdaab
dc.identifier.urihttp://hdl.handle.net/1721.1/46331
dc.description.abstractThe physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Emphasis on physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling outlined. Includes device characterization projects and device design project.en_US
dc.languageen-USen_US
dc.rights.uriUsage Restrictions: This site (c) Massachusetts Institute of Technology 2003. Content within individual courses is (c) by the individual authors unless otherwise noted. The Massachusetts Institute of Technology is providing this Work (as defined below) under the terms of this Creative Commons public license ("CCPL" or "license"). The Work is protected by copyright and/or other applicable law. Any use of the work other than as authorized under this license is prohibited. By exercising any of the rights to the Work provided here, You (as defined below) accept and agree to be bound by the terms of this license. The Licensor, the Massachusetts Institute of Technology, grants You the rights contained here in consideration of Your acceptance of such terms and conditions.en_US
dc.subjectintegrated microelectronic devicesen_US
dc.subjectphysicsen_US
dc.subjectsiliconen_US
dc.subjectcircuiten_US
dc.subjectsemiconductoren_US
dc.subjectp-n junctionen_US
dc.subjectmetal-oxide semiconductor structureen_US
dc.subjectmetal-semiconductor junctionen_US
dc.subjectMOS field-effect transistoren_US
dc.subjectbipolar junction transistoren_US
dc.subjectenergy band diagramen_US
dc.subjectshort-channel MOSFETen_US
dc.subjectdevice characterizationen_US
dc.subjectdevice designen_US
dc.subject6.720Jen_US
dc.subject3.43Jen_US
dc.subject6.720en_US
dc.subject3.43en_US
dc.subjectMicroelectronicsen_US
dc.title6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002en_US
dc.title.alternativeIntegrated Microelectronic Devicesen_US
dc.typeLearning Object
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering


Files in this item

Thumbnail
Name:
6-720JFall-2002/OcwWeb/Electri ...
Size:
15.20Kb
Format:
HTML
View/Open

This item appears in the following Collection(s)

Show simple item record