Browsing MIT Open Access Articles by Author "Saadat, Omair Irfan"
Now showing items 1-6 of 6
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Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment
Palacios, Tomas; Lu, Bin; Saadat, Omair Irfan; Piner, Edwin L. (Institute of Electrical and Electronics Engineers, 2009-12)Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate ... -
Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry
Bagnall, Kevin Robert; Saadat, Omair Irfan; Jayanta Joglekar, Sameer; Palacios, Tomas; Wang, Evelyn (Institute of Electrical and Electronics Engineers (IEEE), 2017-03)Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are a key technology for realizing next generation high-power RF amplifiers and high-efficiency power converters. However, elevated channel temperatures due ... -
Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications
Piner, Edwin L.; Chung, Jinwook; Saadat, Omair Irfan; Palacios, Tomas (Institute of Electrical and Electronics Engineers, 2009-11)This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ... -
Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation
Guo, Shiping; Tirado, Jose M.; Gao, Xiang; Saadat, Omair Irfan; Chung, Jae W.; e.a. (Institute of Electrical and Electronics Engineers, 2009-08)We studied submicrometer (L[subscript G] = 0.15-0.25 à ¿m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al[subscript 2]O[subscript 3] passivation. The combination of ... -
High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor
Lu, Bin; Saadat, Omair Irfan; Palacios, Tomas (Institute of Electrical and Electronics Engineers, 2010-06)In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ... -
Study of gate oxide traps in HfO[subscript 2]/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method
Sun, X.; Chang-Liao, K. S.; Cui, S.; Ma, T. P.; Saadat, Omair Irfan; e.a. (American Institute of Physics (AIP), 2013-03)We introduce an ac-transconductance method to profile the gate oxide traps in a HfO[subscript 2] gated AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) that can exchange carriers with metal ...