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Physics of Hemterostructure Field-Effect Transistors

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Physics of Hemterostructure Field-Effect Transistors

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Author: del Alamo, Jesús A.; Somerville, Mark H.; Ernst, Alexander N.; Zeidenberg, Lisa B.
Publisher: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Date Issued: 1995-01-01
Description:
Contains an introduction, report on one research project and a list of publications.
URI: http://hdl.handle.net/1721.1/57354
Other Identifiers: RLE_PR_138_01_01s_02
Is Part Of: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1995
Solid State Physics, Electronics and Optics
Materials and Fabrication
Physics of Hemterostructure Field-Effect Transistors
Series/Report no.: Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 138
Keywords: Physics of Hemterostructure Field-Effect Transistors, New Physical Model for the Kink Effect on InAIAs/InGaAs HEMTs

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