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dc.contributor.authordel Alamo, Jesús A.en_US
dc.contributor.authorSomerville, Mark H.en_US
dc.contributor.authorErnst, Alexander N.en_US
dc.contributor.authorZeidenberg, Lisa B.en_US
dc.date.accessioned2010-07-16T21:52:55Z
dc.date.available2010-07-16T21:52:55Z
dc.date.issued1995-01-01 to 1995-12-31en_US
dc.identifierRLE_PR_138_01_01s_02en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57354
dc.descriptionContains an introduction, report on one research project and a list of publications.en_US
dc.description.sponsorshipJoint Services Electronics Program Contract DAAH04-95-1-0038en_US
dc.description.sponsorshipTexas Instruments Agreement dated 11/23/94en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1995en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofPhysics of Hemterostructure Field-Effect Transistorsen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 138en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherPhysics of Hemterostructure Field-Effect Transistorsen_US
dc.subject.otherNew Physical Model for the Kink Effect on InAIAs/InGaAs HEMTsen_US
dc.titlePhysics of Hemterostructure Field-Effect Transistorsen_US
dc.typeTechnical Reporten_US


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