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Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors

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Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors

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Author: del Alamo, Jesús A.; Somerville, Mark H.; Ernst, Alexander N.; Nici, Kathleen A.
Publisher: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Date Issued: 1997-01-01
Description:
Contains an introduction, reports on three research projects, research conclusions and a list of publications.
URI: http://hdl.handle.net/1721.1/57427
Other Identifiers: RLE_PR_140_01_01s_02
Is Part Of: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1997
Solid State Physics, Electronics and Optics
Materials and Fabrication
Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
Series/Report no.: Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 140
Keywords: Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors, New Measurement Technique for On-State Breakdown Voltage, On-State Breakdown Physics, New Model for On-state Breakdown Voltage

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