Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors

Home
→
Research Laboratory for Electronics (RLE)
→
RLE Progress Reports
→
RLE Progress Report, No. 140 (1997)
→
View Item

dc.contributor.author	del Alamo, Jesús A.	en_US
dc.contributor.author	Somerville, Mark H.	en_US
dc.contributor.author	Ernst, Alexander N.	en_US
dc.contributor.author	Nici, Kathleen A.	en_US
dc.date.accessioned	2010-07-17T01:41:13Z
dc.date.available	2010-07-17T01:41:13Z
dc.date.issued	1997-01-01 to 1997-12-31	en_US
dc.identifier	RLE_PR_140_01_01s_02	en_US
dc.identifier.uri	http://hdl.handle.net/1721.1/57427
dc.description	Contains an introduction, reports on three research projects, research conclusions and a list of publications.	en_US
dc.description.sponsorship	Joint Services Electronics Program Contract DAAHO4-95-1-0038	en_US
dc.language.iso	en	en_US
dc.publisher	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)	en_US
dc.relation.ispartof	Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1997	en_US
dc.relation.ispartof	Solid State Physics, Electronics and Optics	en_US
dc.relation.ispartof	Materials and Fabrication	en_US
dc.relation.ispartof	Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors	en_US
dc.relation.ispartofseries	Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 140	en_US
dc.rights	Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.	en_US
dc.subject.other	Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors	en_US
dc.subject.other	New Measurement Technique for On-State Breakdown Voltage	en_US
dc.subject.other	On-State Breakdown Physics	en_US
dc.subject.other	New Model for On-state Breakdown Voltage	en_US
dc.title	Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors	en_US
dc.type	Technical Report	en_US