| dc.contributor.author | del Alamo, Jesús A. | en_US |
| dc.contributor.author | Somerville, Mark H. | en_US |
| dc.contributor.author | Ernst, Alexander N. | en_US |
| dc.contributor.author | Nici, Kathleen A. | en_US |
| dc.date.accessioned | 2010-07-17T01:41:13Z | |
| dc.date.available | 2010-07-17T01:41:13Z | |
| dc.date.issued | 1997-01-01 to 1997-12-31 | en_US |
| dc.identifier | RLE_PR_140_01_01s_02 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/57427 | |
| dc.description | Contains an introduction, reports on three research projects, research conclusions and a list of publications. | en_US |
| dc.description.sponsorship | Joint Services Electronics Program Contract DAAHO4-95-1-0038 | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) | en_US |
| dc.relation.ispartof | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1997 | en_US |
| dc.relation.ispartof | Solid State Physics, Electronics and Optics | en_US |
| dc.relation.ispartof | Materials and Fabrication | en_US |
| dc.relation.ispartof | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors | en_US |
| dc.relation.ispartofseries | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 140 | en_US |
| dc.rights | Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. | en_US |
| dc.subject.other | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors | en_US |
| dc.subject.other | New Measurement Technique for On-State Breakdown Voltage | en_US |
| dc.subject.other | On-State Breakdown Physics | en_US |
| dc.subject.other | New Model for On-state Breakdown Voltage | en_US |
| dc.title | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors | en_US |
| dc.type | Technical Report | en_US |
