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Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors

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dc.contributor.author del Alamo, Jesús A. en_US
dc.contributor.author Somerville, Mark H. en_US
dc.contributor.author Ernst, Alexander N. en_US
dc.contributor.author Nici, Kathleen A. en_US
dc.date.accessioned 2010-07-17T01:41:13Z
dc.date.available 2010-07-17T01:41:13Z
dc.date.issued 1997-01-01 to 1997-12-31 en_US
dc.identifier RLE_PR_140_01_01s_02 en_US
dc.identifier.uri http://hdl.handle.net/1721.1/57427
dc.description Contains an introduction, reports on three research projects, research conclusions and a list of publications. en_US
dc.description.sponsorship Joint Services Electronics Program Contract DAAHO4-95-1-0038 en_US
dc.language.iso en en_US
dc.publisher Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) en_US
dc.relation.ispartof Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1997 en_US
dc.relation.ispartof Solid State Physics, Electronics and Optics en_US
dc.relation.ispartof Materials and Fabrication en_US
dc.relation.ispartof Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors en_US
dc.relation.ispartofseries Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 140 en_US
dc.rights Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. en_US
dc.subject.other Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors en_US
dc.subject.other New Measurement Technique for On-State Breakdown Voltage en_US
dc.subject.other On-State Breakdown Physics en_US
dc.subject.other New Model for On-state Breakdown Voltage en_US
dc.title Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors en_US
dc.type Technical Report en_US


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