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dc.contributor.authorKim, Byungsub
dc.contributor.authorDickson, Timothy O.
dc.contributor.authorLiu, Yong
dc.contributor.authorBulzacchelli, John F.
dc.contributor.authorFriedman, Daniel J.
dc.date.accessioned2010-11-05T18:54:39Z
dc.date.available2010-11-05T18:54:39Z
dc.date.issued2009-05
dc.date.submitted2009-02
dc.identifier.isbn978-1-4244-3458-9
dc.identifier.otherINSPEC Accession Number: 10727922
dc.identifier.urihttp://hdl.handle.net/1721.1/59837
dc.description.abstractThe design of compact low-power I/O transceivers continues to be a challenge for both chip-to-chip and backplane applications. The introduction of dense fine-pitch silicon packaging technologies, that in principle are capable of supporting tens of thousands of high-data-rate I/O for local chip-to-chip interconnect, will make I/O area and power requirements even more stringent.This paper describes an alternative low-power compact I/O transceiver with RX equalization that achieves the required multi-bit postcursor cancellation without a high tap-count DFE. While this work targets data transmission over Si carrier links at rates up to 10Gb/s, it is also relevant to backplane channels.en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/ISSCC.2009.4977368en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.titleA 10Gb/s compact low-power serial I/O with DFE-IIR equalization in 65nm CMOSen_US
dc.typeArticleen_US
dc.identifier.citationYong Liu et al. “A 10Gb/s compact low-power serial I/O with DFE-IIR equalization in 65nm CMOS.” Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009. IEEE International. 2009. 182-183,183a. © 2009 Institute of Electrical and Electronics Engineers.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.approverKim, Byungsub
dc.contributor.mitauthorKim, Byungsub
dc.relation.journalIEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009en_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsYong Liu; Byungsub Kim; Dickson, T.O.; Bulzacchelli, J.F.; Friedman, D.J.en
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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