dc.contributor.author | del Alamo, Jesus A. | |
dc.contributor.author | Kim, Dae-Hyun | |
dc.contributor.author | Chen, Peter | |
dc.contributor.author | Ha, Wonill | |
dc.contributor.author | Urteaga, Miguel | |
dc.contributor.author | Brar, B. | |
dc.date.accessioned | 2012-09-24T18:12:24Z | |
dc.date.available | 2012-09-24T18:12:24Z | |
dc.date.issued | 2010-12 | |
dc.date.submitted | 2010-12 | |
dc.identifier.isbn | 978-1-4244-7419-6 | |
dc.identifier.isbn | 978-1-4424-7418-5 | |
dc.identifier.issn | 0163-1918 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/73128 | |
dc.description.abstract | We have demonstrated 50-nm enhancement-mode (E-mode) In[subscript 0.7]Ga[subscript 0.3]As PHEMTs with f[subscript max] in excess of 1 THz. The devices feature a Pt gate sinking process to effectively thin down the In[subscript 0.52]Al[subscript 0.48]As barrier layer, together with a two-step recess process. The fabricated device with L[subscript g] = 50-nm exhibits V[subscript T] = 0.1 V, g[subscript m,max] = 1.75 mS/μm, f[subscript T] = 465 GHz and f[subscript max] = 1.06 THz at a moderate value of V[subscript DS] = 0.75 V. In addition, we have physically modeled the abnormal peaky behavior in Mason's unilateral gain (U[subscript g]) at high values of VDS. A revised small signal model that includes a shunting R[subscript gd-NDR] with negative value successfully describes the behavior of the device from 1 to 67 GHz. | en_US |
dc.description.sponsorship | United States. Defense Advanced Research Projects Agency (Space and Naval Warfare Systems Center San Diego (U.S.)) (Contract N660001-06-C-2025) | en_US |
dc.language.iso | en_US | |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/IEDM.2010.5703453 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | IEEE | en_US |
dc.title | 50-nm E-mode In[subscript 0.7]Ga[subscript 0.3]As PHEMTs on 100-mm InP substrate with f[subscript max] > 1 THz | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Kim, Dae-Hyun et al. “50-nm E-mode In[subscript 0.7]IEEE International Electron Devices Meeting (IEDM), 2010. 30.6.1–30.6.4. © Copyright 2010 IEEE | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.contributor.mitauthor | del Alamo, Jesus A. | |
dc.relation.journal | Proceedings of the IEEE International Electron Devices Meeting (IEDM), 2010 | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/ConferencePaper | en_US |
dspace.orderedauthors | Kim, Dae-Hyun; del Alamo, Jesus A.; Chen, Peter; Wonill Ha, Peter; Urteaga, Miguel; Brar, Berinder | en |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |