Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur
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Gradecak_Depth-resolved.pdf
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Author(s)
Fabbri, Filippo
Smith, Matthew J.
Recht, Daniel
Aziz, Michael J.
Salviati, Giancarlo
Gradecak, Silvija
Date Issued
January 2013
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Fabbri, Filippo, Matthew J. Smith, Daniel Recht, Michael J. Aziz, Silvija Gradečak, and Giancarlo Salviati. “Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur.” Applied Physics Letters 102, no. 3 (2013): 031909. © 2013 American Institute of Physics
Version
Final published version
Abstract
We investigate the luminescence of Si supersaturated with S (Si:S) using depth-resolved cathodoluminescence spectroscopy and secondary ion mass spectroscopy as the S concentration is varied over 2 orders of magnitude (10[superscript 18]–10[superscript 20] cm[superscript −3]). In single-crystalline supersaturated Si:S, we identify strong luminescence from intra-gap states related to Si self-interstitials and a S-related luminescence at 0.85 eV, both of which show a strong dependence on S concentration in the supersaturated regime. Sufficiently high S concentrations in Si (>10[superscript 20] cm[superscript −3]) result in complete luminescence quenching, which we propose is a consequence of the overlapping of the defect band and conduction band.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1063/1.4788743
