High active carrier concentration in n-type, thin film Ge using delta-doping

Author(s)
Cai, Yan; Bessette, Jonathan T.; Kimerling, Lionel C.; Michel, Jurgen; Camacho-Aguilera, Rodolfo Ernesto
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Abstract
We demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous concentrations above 1 × 10[superscript 20]cm[superscript −3], and uniform activated dopant concentrations above 4 × 10[superscript 19]cm[superscript −3] in a 600-800nm thick Ge layer after in-diffusion. By controlling dopant out-diffusion, near-complete incorporation of phosphorus diffusion source is shown.
Date issued
2012-09
URI
http://hdl.handle.net/1721.1/79734
Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Optical Materials Express
Publisher
Optical Society of America
Citation
Camacho-Aguilera, Rodolfo E. et al. “High Active Carrier Concentration in N-type, Thin Film Ge Using Delta-doping.” Optical Materials Express 2.11 (2012): 1462. © 2012 OSA
Version: Final published version
ISSN
2159-3930
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