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dc.contributor.authorHeo, Jaeyeong
dc.contributor.authorSiah, Sin Cheng
dc.contributor.authorKim, Sang Bok
dc.contributor.authorGordon, Roy G.
dc.contributor.authorMailoa, Jonathan P
dc.contributor.authorBrandt, Riley E
dc.contributor.authorBuonassisi, Anthony
dc.contributor.authorLee, Yun Seog
dc.date.accessioned2013-11-15T15:52:10Z
dc.date.available2013-11-15T15:52:10Z
dc.date.issued2013-04
dc.date.submitted2012-12
dc.identifier.issn1754-5692
dc.identifier.issn1754-5706
dc.identifier.urihttp://hdl.handle.net/1721.1/82121
dc.description.abstractWe demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work emphasizes the importance of interface engineering in improving the performance of Earth-abundant solar cells.en_US
dc.description.sponsorshipChesonis Family Foundationen_US
dc.description.sponsorshipMIT Energy Initiative (Robert Bosch GmbH)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Award CBET-1032955)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (CAREER Award ECCS-1150878)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Award DMR-0819762)en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Graduate Research Fellowship Programen_US
dc.language.isoen_US
dc.publisherRoyal Society of Chemistryen_US
dc.relation.isversionofhttp://dx.doi.org/10.1039/c3ee24461jen_US
dc.rightsArticle is available under a Creative Commons licenseen_US
dc.rights.urihttp://creativecommons.org/en_US
dc.sourceRSCen_US
dc.titleUltrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cellsen_US
dc.typeArticleen_US
dc.identifier.citationLee, Yun Seog, Jaeyeong Heo, Sin Cheng Siah, Jonathan P. Mailoa, Riley E. Brandt, Sang Bok Kim, Roy G. Gordon, and Tonio Buonassisi. “Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells.” Energy & Environmental Science 6, no. 7 (2013): 2112. © Royal Society of Chemistryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Laboratory for Manufacturing and Productivityen_US
dc.contributor.mitauthorLee, Yun seogen_US
dc.contributor.mitauthorSiah, Sin Chengen_US
dc.contributor.mitauthorMailoa, Jonathan P.en_US
dc.contributor.mitauthorBrandt, Riley E.en_US
dc.contributor.mitauthorBuonassisi, Tonioen_US
dc.relation.journalEnergy & Environmental Scienceen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsLee, Yun Seog; Heo, Jaeyeong; Siah, Sin Cheng; Mailoa, Jonathan P.; Brandt, Riley E.; Kim, Sang Bok; Gordon, Roy G.; Buonassisi, Tonioen_US
dc.identifier.orcidhttps://orcid.org/0000-0003-2239-6192
dc.identifier.orcidhttps://orcid.org/0000-0003-2785-552X
dc.identifier.orcidhttps://orcid.org/0000-0001-8345-4937
mit.licensePUBLISHER_CCen_US
mit.metadata.statusComplete


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