Integrated Circuits Based on Bilayer MoS
Author(s)
Wang, Han; Yu, Lili; Lee, Yi-Hsien; Shi, Yumeng; Hsu, Allen Long; Chin, Matthew L.; Li, Lain-Jong; Dubey, Madan; Kong, Jing; Palacios, Tomas; ... Show more Show less
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Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene’s advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multistage circuits and logic building blocks on MoS2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between 2 to 12 transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS2. Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions.
Date issued
2012-09Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
Nano Letters
Publisher
American Chemical Society
Citation
Wang, Han, Lili Yu, Yi-Hsien Lee, Yumeng Shi, Allen Hsu, Matthew L. Chin, Lain-Jong Li, Madan Dubey, Jing Kong, and Tomas Palacios. “ Integrated Circuits Based on Bilayer MoS 2 Transistors .” Nano Lett. 12, no. 9 (September 12, 2012): 4674–4680.
Version: Author's final manuscript
ISSN
1530-6984
1530-6992