Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon
Author(s)
Sher, Meng-Ju; Krich, Jacob J.; Recht, Daniel; Aziz, Michael J.; Lindenberg, Aaron M.; Akey, Austin J; Winkler, Mark Thomas; Buonassisi, Anthony; Simmons, Christie B.; ... Show more Show less
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Intermediate-band materials have the potential to be highly efficient solar cells and can be fabricated by incorporating ultrahigh concentrations of deep-level dopants. Direct measurements of the ultrafast carrier recombination processes under supersaturated dopant concentrations have not been previously conducted. Here, we use optical-pump/terahertz-probe measurements to study carrier recombination dynamics of chalcogen-hyperdoped silicon with sub-picosecond resolution. The recombination dynamics is described by two exponential decay time scales: a fast decay time scale ranges between 1 and 200 ps followed by a slow decay on the order of 1 ns. In contrast to the prior theoretical predictions, we find that the carrier lifetime decreases with increasing dopant concentration up to and above the insulator-to-metal transition. Evaluating the material's figure of merit reveals an optimum doping concentration for maximizing performance.
Date issued
2014-08Department
Massachusetts Institute of Technology. Department of Mechanical Engineering; Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity; Massachusetts Institute of Technology. Photovoltaic Research LaboratoryJournal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Sher, Meng-Ju, Christie B. Simmons, Jacob J. Krich, Austin J. Akey, Mark T. Winkler, Daniel Recht, Tonio Buonassisi, Michael J. Aziz, and Aaron M. Lindenberg. “Picosecond Carrier Recombination Dynamics in Chalcogen-Hyperdoped Silicon.” Appl. Phys. Lett. 105, no. 5 (August 4, 2014): 053905. © 2014 AIP Publishing LLC
Version: Final published version
ISSN
0003-6951
1077-3118