MIT Libraries logoDSpace@MIT

MIT
View Item 
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Synthesis of large-area multilayer hexagonal boron nitride for high material performance

Author(s)
Kim, Soo Min; Hsu, Allen; Park, Min Ho; Chae, Sang Hoon; Yun, Seok Joon; Lee, Joo Song; Cho, Dae-Hyun; Fang, Wenjing; Lee, Changgu; Dresselhaus, Mildred; Kim, Ki Kang; Lee, Young Hee; Kong, Jing; Palacios, Tomas; ... Show more Show less
Thumbnail
DownloadKong_Synthesis of.pdf (3.658Mb)
PUBLISHER_CC

Publisher with Creative Commons License

Creative Commons Attribution

Terms of use
Creative Commons Attribution 4.0 International License http://creativecommons.org/licenses/by/4.0/
Metadata
Show full item record
Abstract
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young’s modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ~24,000 cm[superscript 2] V[superscript −1] s[superscript −1] at room temperature, higher than that (~13,000 [superscript 2] V[superscript −1] s[superscript −1]) with exfoliated h-BN. By placing additional h-BN on a SiO[subscript 2]/Si substrate for a MoS[subscript 2] (WSe[subscript 2]) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.
Date issued
2015-10
URI
http://hdl.handle.net/1721.1/100807
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Physics
Journal
Nature Communications
Publisher
Nature Publishing Group
Citation
Kim, Soo Min, Allen Hsu, Min Ho Park, Sang Hoon Chae, Seok Joon Yun, Joo Song Lee, Dae-Hyun Cho, et al. “Synthesis of Large-Area Multilayer Hexagonal Boron Nitride for High Material Performance.” Nat Comms 6 (October 28, 2015): 8662. © 2015 Macmillan Publishers Limited
Version: Final published version
ISSN
2041-1723

Collections
  • MIT Open Access Articles

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

My Account

Login

Statistics

OA StatisticsStatistics by CountryStatistics by Department
MIT Libraries
PrivacyPermissionsAccessibilityContact us
MIT
Content created by the MIT Libraries, CC BY-NC unless otherwise noted. Notify us about copyright concerns.