Waveguide-coupled detector in zero-change complementary metal–oxide–semiconductor
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We report a waveguide-coupled photodetector realized in a standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The photodetector exploits carrier generation in the silicon-germanium normally utilized as stressor in pFETs. The measured responsivity and 3 dB bandwidth are of 0.023 A/W at a wavelength of 1180 nm and 32 GHz at −1 V bias (18 GHz at 0 V bias). The dark current is less than 10 pA and the dynamic range is larger than 60 dB.
Date issued
2015-07Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Research Laboratory of ElectronicsJournal
Applied Physics Letters
Citation
Alloatti, L., S. A. Srinivasan, J. S. Orcutt, and R. J. Ram. “Waveguide-Coupled Detector in Zero-Change Complementary Metal–oxide–semiconductor.” Applied Physics Letters 107, no. 4 (July 27, 2015): 041104. © 2015 AIP Publishing LLC
Version: Final published version
ISSN
0003-6951
1077-3118