| dc.contributor.author | Stoop, Norbert | |
| dc.contributor.author | Lagrange, Romain | |
| dc.contributor.author | Lopez Jimenez, Francisco | |
| dc.contributor.author | Dunkel, Joern | |
| dc.contributor.author | Reis, Pedro Miguel | |
| dc.date.accessioned | 2016-03-11T17:23:24Z | |
| dc.date.available | 2016-03-11T17:23:24Z | |
| dc.date.issued | 2016-03 | |
| dc.date.submitted | 2016-02 | |
| dc.identifier.issn | 0031-9007 | |
| dc.identifier.issn | 1079-7114 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/101685 | |
| dc.description.abstract | We investigate the influence of curvature and topology on crystalline dimpled patterns on the surface of generic elastic bilayers. Our numerical analysis predicts that the total number of defects created by adiabatic compression exhibits universal quadratic scaling for spherical, ellipsoidal, and toroidal surfaces over a wide range of system sizes. However, both the localization of individual defects and the orientation of defect chains depend strongly on the local Gaussian curvature and its gradients across a surface. Our results imply that curvature and topology can be utilized to pattern defects in elastic materials, thus promising improved control over hierarchical bending, buckling, or folding processes. Generally, this study suggests that bilayer systems provide an inexpensive yet valuable experimental test bed for exploring the effects of geometrically induced forces on assemblies of topological charges. | en_US |
| dc.description.sponsorship | MIT Masdar Program | en_US |
| dc.description.sponsorship | Swiss National Science Foundation (148743) | en_US |
| dc.description.sponsorship | Solomon Buchsbaum AT&T Research Fund | en_US |
| dc.description.sponsorship | Alfred P. Sloan Foundation (Sloan Research Fellowship) | en_US |
| dc.description.sponsorship | National Science Foundation (U.S.) (CAREER CMMI-1351449) | en_US |
| dc.publisher | American Physical Society | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevLett.116.104301 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | American Physical Society | en_US |
| dc.title | Curvature-Controlled Defect Localization in Elastic Surface Crystals | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Jimenez, Francisco Lopez, Norbert Stoop, Romain Lagrange, Jorn Dunkel, and Pedro M. Reis. “Curvature-Controlled Defect Localization in Elastic Surface Crystals.” Physical Review Letters 116, no. 10 (March 7, 2016). © 2016 American Physical Society | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Civil and Environmental Engineering | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Mathematics | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Mechanical Engineering | en_US |
| dc.contributor.mitauthor | Lopez Jimenez, Francisco | en_US |
| dc.contributor.mitauthor | Stoop, Norbert | en_US |
| dc.contributor.mitauthor | Lagrange, Romain | en_US |
| dc.contributor.mitauthor | Dunkel, Joern | en_US |
| dc.contributor.mitauthor | Reis, Pedro Miguel | en_US |
| dc.relation.journal | Physical Review Letters | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dc.date.updated | 2016-03-08T23:00:07Z | |
| dc.language.rfc3066 | en | |
| dc.rights.holder | American Physical Society | |
| dspace.orderedauthors | Jimenez, Francisco Lopez; Stoop, Norbert; Lagrange, Romain; Dunkel, Jorn; Reis, Pedro M. | en_US |
| dc.identifier.orcid | https://orcid.org/0000-0003-3984-828X | |
| dc.identifier.orcid | https://orcid.org/0000-0001-8569-5400 | |
| dc.identifier.orcid | https://orcid.org/0000-0002-9093-0193 | |
| dc.identifier.orcid | https://orcid.org/0000-0001-8865-2369 | |
| mit.license | PUBLISHER_POLICY | en_US |