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dc.contributor.authorZhang, Lin
dc.contributor.authorKimerling, Lionel C.
dc.contributor.authorMichel, Jurgen
dc.contributor.authorAgarwal, Anuradha Murthy
dc.date.accessioned2016-03-31T15:58:18Z
dc.date.available2016-03-31T15:58:18Z
dc.date.issued2013-11
dc.date.submitted2013-06
dc.identifier.issn2192-8614
dc.identifier.issn2192-8606
dc.identifier.urihttp://hdl.handle.net/1721.1/101975
dc.description.abstractGroup IV photonics hold great potential for nonlinear applications in the near- and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octave-spanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.en_US
dc.language.isoen_US
dc.publisherWalter de Gruyteren_US
dc.relation.isversionofhttp://dx.doi.org/10.1515/nanoph-2013-0020en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceDe Gruyteren_US
dc.titleNonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrareden_US
dc.typeArticleen_US
dc.identifier.citationZhang, Lin, Anuradha M. Agarwal, Lionel C. Kimerling, and Jurgen Michel. “Nonlinear Group IV Photonics Based on Silicon and Germanium: From Near-Infrared to Mid-Infrared.” Nanophotonics 3, no. 4–5 (January 1, 2014). © 2014 Science Wise Publishing & De Gruyteren_US
dc.contributor.departmentMassachusetts Institute of Technology. Materials Processing Centeren_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microphotonics Centeren_US
dc.contributor.mitauthorZhang, Linen_US
dc.contributor.mitauthorAgarwal, Anuradha Murthyen_US
dc.contributor.mitauthorKimerling, Lionel C.en_US
dc.contributor.mitauthorMichel, Jurgenen_US
dc.relation.journalNanophotonicsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsZhang, Lin; Agarwal, Anuradha M.; Kimerling, Lionel C.; Michel, Jurgenen_US
dc.identifier.orcidhttps://orcid.org/0000-0003-0545-1110
dc.identifier.orcidhttps://orcid.org/0000-0002-3913-6189
mit.licensePUBLISHER_POLICYen_US


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