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dc.contributor.authorChang, Wendi
dc.contributor.authorAkselrod, Gleb Markovitch
dc.contributor.authorBulovic, Vladimir
dc.date.accessioned2016-05-03T00:09:12Z
dc.date.available2016-05-03T00:09:12Z
dc.date.issued2015-04
dc.date.submitted2015-02
dc.identifier.issn1936-0851
dc.identifier.issn1936-086X
dc.identifier.urihttp://hdl.handle.net/1721.1/102364
dc.description.abstractDirect modification of exciton energy has been previously used to optimize the operation of organic optoelectronic devices. One demonstrated method for exciton energy modification is through the use of the solvent dielectric effects in doped molecular films. To gain a deeper appreciation of the underlying physical mechanisms, in this work we test the solid-state solvation effect in molecular thin films under applied external pressure. We observe that external mechanical pressure increases dipole–dipole interactions, leading to shifts in the Frenkel exciton energy and enhancement of the time-resolved spectral red shift associated with the energy-transfer-mediated exciton diffusion. Measurements are performed on host:dopant molecular thin films, which show bathochromic shifts in photoluminescence (PL) under increasing pressure. This is in agreement with a simple solvation theory model of exciton energetics with a fitting parameter based on the mechanical properties of the host matrix material. We measure no significant change in exciton lifetime with increasing pressure, consistent with unchanged aggregation in molecular films under compression. However, we do observe an increase in exciton spectral thermalization rate for compressed molecular films, indicating enhanced exciton diffusion for increased dipole–dipole interactions under pressure. The results highlight the contrast between molecular energy landscapes obtained when dipole–dipole interactions are increased by the pressure technique versus the conventional dopant concentration variation methods, which can lead to extraneous effects such as aggregation at higher doping concentrations. The present work demonstrates the use of pressure-probing techniques in studying energy disorder and exciton dynamics in amorphous molecular thin films.en_US
dc.description.sponsorshipNational Science Foundation (U.S.)en_US
dc.description.sponsorshipUnited States. Dept. of Energy. Center for Excitonics (Award DE-SC0001088)en_US
dc.language.isoen_US
dc.publisherAmerican Chemical Society (ACS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/acsnano.5b00938en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceChangen_US
dc.titleSolid-State Solvation and Enhanced Exciton Diffusion in Doped Organic Thin Films under Mechanical Pressureen_US
dc.typeArticleen_US
dc.identifier.citationChang, Wendi, Gleb M. Akselrod, and Vladimir Bulovic. “Solid-State Solvation and Enhanced Exciton Diffusion in Doped Organic Thin Films Under Mechanical Pressure.” ACS Nano 9, no. 4 (April 28, 2015): 4412–4418.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. School of Engineeringen_US
dc.contributor.approverChang, Wendien_US
dc.contributor.mitauthorChang, Wendien_US
dc.contributor.mitauthorBulovic, Vladimiren_US
dc.relation.journalACS Nanoen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsChang, Wendi; Akselrod, Gleb M.; Bulovic, Vladimiren_US
dc.identifier.orcidhttps://orcid.org/0000-0002-0960-2580
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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