Correlation of a generation-recombination center with a deep level trap in GaN
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We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E[subscript c] − 0.26 eV, E[subscript c] − 0.59 eV, and E[subscript c] − 0.71 eV. The noise spectroscopy identified a generation recombination centre at E[subscript c] − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at E[subscript c] − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials.
Date issued
2015-03Department
Massachusetts Institute of Technology. Department of Materials Science and EngineeringJournal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Nguyen, X. S., K. Lin, Z. Zhang, B. McSkimming, A. R. Arehart, J. S. Speck, S. A. Ringel, E. A. Fitzgerald, and S. J. Chua. “Correlation of a Generation-Recombination Center with a Deep Level Trap in GaN.” Applied Physics Letters 106, no. 10 (March 9, 2015): 102101. ©2015 AIP Publishing LLC.
Version: Final published version
ISSN
0003-6951
1077-3118