Resonant tunneling and intrinsic bistability in twisted graphene structures
Author(s)Rodriguez Nieva, Joaquin Francisco; Dresselhaus, Mildred; Levitov, Leonid
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We predict that vertical transport in heterostructures formed by twisted graphene layers can exhibit a unique bistability mechanism. Intrinsically bistable I-V characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling regime. We consider a simple trilayer architecture, with the outer layers acting as the source and drain and the middle layer floating. Under bias, the middle layer can be either resonant or nonresonant with the source and drain layers. The bistability is controlled by geometric device parameters easily tunable in experiments. The nanoscale architecture can enable uniquely fast switching times.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Physics
Physical Review B
American Physical Society
Rodriguez-Nieva, J. F., M. S. Dresselhaus, and L. S. Levitov. "Resonant tunneling and intrinsic bistability in twisted graphene structures." Physics Review B 94 (August 2016), 085412. ©2016 American Physical Society.
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