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dc.contributor.authorNavickas, Edvinas
dc.contributor.authorHuber, Tobias M.
dc.contributor.authorChen, Yan
dc.contributor.authorHetaba, Walid
dc.contributor.authorHolzlechner, Gerald
dc.contributor.authorRupp, Ghislain
dc.contributor.authorStöger-Pollach, Michael
dc.contributor.authorFriedbacher, Gernot
dc.contributor.authorHutter, Herbert
dc.contributor.authorYildiz, Bilge
dc.contributor.authorFleig, Jürgen
dc.date.accessioned2016-10-19T18:34:33Z
dc.date.available2016-10-19T18:34:33Z
dc.date.issued2015-03
dc.date.submitted2014-11
dc.identifier.issn1463-9076
dc.identifier.issn1463-9084
dc.identifier.urihttp://hdl.handle.net/1721.1/104857
dc.description.abstractIn this study, the contribution of grain boundaries to the oxygen reduction and diffusion kinetics of La[subscript 0.8]Sr[subscript 0.2]MnO[subscript 3] (LSM) thin films is investigated. Polycrystalline LSM thin films with columnar grains of different grain sizes as well as epitaxial thin films were prepared by pulsed laser deposition. 18O tracer exchange experiments were performed at temperatures from 570 °C to 810 °C and subsequently analyzed by secondary ion mass spectrometry (SIMS). The isotope concentration depth profiles of polycrystalline films clearly indicate contributions from diffusion and surface exchange in grains as well as in grain boundaries. Measured depth profiles were analyzed by finite element modeling and revealed the diffusion coefficients D and oxygen exchange coefficients k of both the grain bulk and grain boundaries. Values obtained for grain boundaries (D[subscript gb] and k[subscript gb]) are almost three orders of magnitude higher than those of the grains (D[subscript g] and k[subscript g]). Hence, grain boundaries may not only facilitate fast oxygen diffusion but also fast oxygen exchange kinetics. Variation of the A-site stoichiometry ((La[subscript 0.8]Sr[subscript 0.2])0.95MnO[subscript 3]) did not lead to large changes of the kinetic parameters. Properties found for epitaxial layers without grain boundaries (Db and kb) are close to those of the grains in polycrystalline layers.en_US
dc.description.sponsorshipAustrian Science Fund (FWF project F4509-N16)en_US
dc.description.sponsorshipAustrian Science Fund (FWF project P21960-N17)en_US
dc.description.sponsorshipAustrian Science Fund (FWF project W1243-N16)en_US
dc.description.sponsorshipUnited States. Dept. of Energy. Office of Basic Energy Sciences (Grant No. DE-SC000263)en_US
dc.language.isoen_US
dc.publisherRoyal Society of Chemistryen_US
dc.relation.isversionofhttp://dx.doi.org/10.1039/c4cp05421ken_US
dc.rightsCreative Commons Attribution 3.0 Unported licenseen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc/3.0/en_US
dc.sourceRoyal Society of Chemistryen_US
dc.titleFast oxygen exchange and diffusion kinetics of grain boundaries in Sr-doped LaMnO[subscript 3] thin filmsen_US
dc.title.alternativeFast oxygen exchange and diffusion kinetics of grain boundaries in Sr-doped LaMnO3 thin filmsen_US
dc.typeArticleen_US
dc.identifier.citationNavickas, Edvinas, Tobias M. Huber, Yan Chen, Walid Hetaba, Gerald Holzlechner, Ghislain Rupp, Michael Stöger-Pollach, Gernot Friedbacher, Herbert Hutter, Yildiz Bilge, and Jurgen Fleig. "Fast oxygen exchange and diffusion kinetics of grain boundaries in Sr-doped LaMnO[subscript 3] thin films." Physical Chemistry Chemical Physics, vol. 17, no 12, March 2015, pp. 7583-8284.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Nuclear Science and Engineeringen_US
dc.contributor.mitauthorChen, Yan
dc.contributor.mitauthorYildiz, Bilge
dc.relation.journalPhysical. Chemistry Chemical Physicsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsNavickas, Edvinas; Huber, Tobias M.; Chen, Yan; Hetaba, Walid; Holzlechner, Gerald; Rupp, Ghislain; Stöger-Pollach, Michael; Friedbacher, Gernot; Hutter, Herbert; Yildiz, Bilge; Fleig, Jürgenen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0001-6063-023X
dc.identifier.orcidhttps://orcid.org/0000-0002-2688-5666
mit.licensePUBLISHER_CCen_US


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