Topological semimetal to insulator quantum phase transition in the Zintl compounds Ba[subscript 2]X(X = Si,Ge)
Author(s)
Zhu, Ziming; Li, Mingda; Li, Ju
DownloadPhysRevB.94.155121.pdf (805.8Kb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Alternative title
Topological semimetal to insulator quantum phase transition in the Zintl compounds Ba2X(X = Si,Ge)
Terms of use
Metadata
Show full item recordAbstract
By first-principles calculations, we find that Ba[subscript 2]X(X=Si,Ge) hosts a topological semimetal phase with one nodal ring in the k[subscript x]=0 plane, which is protected by the glide mirror symmetry when spin-orbit coupling (SOC) is ignored. The corresponding drumheadlike surface flat band appears on the (100) surface in surface Green's function calculation. Furthermore, a topological-semimetal-to-insulator transition is found. The nodal line semimetal would evolve into a topological insulator as SOC is turned on. The topologically protected metallic surface states emerge around the [bar over]Γ point, which could be tuned into the topologically trivial insulator state by more than 3% hydrostatic strain. These results reveal a category of materials showing quantum phase transition between topological semimetal and insulator, and tunability through elastic strain engineering.
Date issued
2016-10Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Mechanical Engineering; Massachusetts Institute of Technology. Department of Nuclear Science and EngineeringJournal
Physical Review B
Publisher
American Physical Society
Citation
Zhu, Ziming, Mingda Li, and Ju Li. “Topological Semimetal to Insulator Quantum Phase Transition in the Zintl Compounds B a 2 X ( X = Si , Ge ).” Physical Review B 94.15 (2016): n. pag. © 2016 American Physical Society
Version: Final published version
ISSN
2469-9950
2469-9969