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dc.contributor.authorNovak, Spencer
dc.contributor.authorLin, Pao-Tai
dc.contributor.authorLi, Cheng
dc.contributor.authorBorodinov, Nikolay
dc.contributor.authorMalinowski, Marcin
dc.contributor.authorFathpour, Sasan
dc.contributor.authorLumdee, Chatdanai
dc.contributor.authorXu, Chi
dc.contributor.authorKik, Pieter G.
dc.contributor.authorDeng, Weiwei
dc.contributor.authorHu, Juejun
dc.contributor.authorAgarwal, Anuradha
dc.contributor.authorLuzinov, Igor
dc.contributor.authorRichardson, Kathleen
dc.contributor.authorHan, Zhaohong
dc.contributor.authorMonmeyran, Corentin Pierre
dc.contributor.authorPatel, Neil Sunil
dc.contributor.authorDu, Qingyang
dc.date.accessioned2016-12-21T20:51:36Z
dc.date.available2016-12-21T20:51:36Z
dc.date.issued2016-08
dc.identifier.issn1940-087X
dc.identifier.urihttp://hdl.handle.net/1721.1/105924
dc.description.abstractSolution-based electrospray film deposition, which is compatible with continuous, roll-to-roll processing, is applied to chalcogenide glasses. Two chalcogenide compositions are demonstrated: Ge[subscript 23]Sb[subscript 7]S[subscript 70] and As[subscript 40]S[subscript 60] , which have both been studied extensively for planar mid-infrared (midIR) microphotonic devices. In this approach, uniform thickness films are fabricated through the use of computer numerical controlled (CNC) motion. Chalcogenide glass (ChG) is written over the substrate by a single nozzle along a serpentine path. Films were subjected to a series of heat treatments between 100 °C and 200 °C under vacuum to drive off residual solvent and densify the films. Based on transmission Fourier transform infrared (FTIR) spectroscopy and surface roughness measurements, both compositions were found to be suitable for the fabrication of planar devices operating in the mid-IR region. Residual solvent removal was found to be much quicker for the As[subscript 40]S[subscript 60] film as compared to Ge[subscript 23]Sb[subscript 7]S[subscript 70]. Based on the advantages of electrospray, direct printing of a gradient refractive index (GRIN) mid-IR transparent coating is envisioned, given the difference in refractive index of the two compositions in this study.en_US
dc.description.sponsorshipUnited States. Defense Threat Reduction Agency (Contracts HDTRA1-10-1-0073 and HDTRA1-13-1-0001)en_US
dc.language.isoen_US
dc.publisherMyJoVE Corporationen_US
dc.relation.isversionofhttp://dx.doi.org/10.3791/54379en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceJournal of Visualized Experiments (JoVE)en_US
dc.titleElectrospray Deposition of Uniform Thickness Ge[subscript 23]Sb[subscript 7]S[subscript 70] and As[subscript 40]S[subscript 60] Chalcogenide Glass Filmsen_US
dc.title.alternativeElectrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Filmsen_US
dc.typeArticleen_US
dc.identifier.citationNovak, Spencer et al. “Electrospray Deposition of Uniform Thickness Ge[subscript 23]Sb[subscript 7]S[subscript 70] and As{subscript 40]S[subscript 60] Chalcogenide Glass Films.” Journal of Visualized Experiments 114 (2016): n. pag. © 2016 Journal of Visualized Experimentsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.mitauthorHan, Zhaohong
dc.contributor.mitauthorMonmeyran, Corentin Pierre
dc.contributor.mitauthorPatel, Neil Sunil
dc.contributor.mitauthorDu, Qingyang
dc.relation.journalJournal of Visualized Experimentsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsNovak, Spencer; Lin, Pao-Tai; Li, Cheng; Borodinov, Nikolay; Han, Zhaohong; Monmeyran, Corentin; Patel, Neil; Du, Qingyang; Malinowski, Marcin; Fathpour, Sasan; Lumdee, Chatdanai; Xu, Chi; Kik, Pieter G.; Deng, Weiwei; Hu, Juejun; Agarwal, Anuradha; Luzinov, Igor; Richardson, Kathleenen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0003-2954-8005
dc.identifier.orcidhttps://orcid.org/0000-0001-5998-8904
dc.identifier.orcidhttps://orcid.org/0000-0002-8564-3536
dc.identifier.orcidhttps://orcid.org/0000-0002-1424-356X
mit.licensePUBLISHER_POLICYen_US


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