dc.contributor.author | Chere, Eyob K. | |
dc.contributor.author | Zhang, Qian | |
dc.contributor.author | Yao, Mengliang | |
dc.contributor.author | Cao, Feng | |
dc.contributor.author | Sun, Jingying | |
dc.contributor.author | Chen, Shuo | |
dc.contributor.author | Opeil, Cyril | |
dc.contributor.author | Ren, Zhifeng | |
dc.contributor.author | McEnaney, Kenneth | |
dc.date.accessioned | 2017-03-30T19:21:43Z | |
dc.date.available | 2017-03-30T19:21:43Z | |
dc.date.issued | 2015-02 | |
dc.date.submitted | 2015-02 | |
dc.identifier.issn | 2211-2855 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/107788 | |
dc.description.abstract | Lead telluride and its alloys have been extensively studied for medium temperature thermoelectric applications due to decent figure-of-merit (ZT) at temperature close to 900 K. However, little emphasis has been given to improve the ZT near room temperature. In this investigation, we report a systematic study of Cr doping in PbTe[subscript 1−y]Se[subscript y] with y=0, 0.25, 0.5, 0.75, 0.85, and 1. We found the peak ZT temperature increased with increasing concentration of Se. The highest ZT of ~0.6 at room temperature in Te-rich Cr[subscript 0.015]Pb[subscript 0.985]Te[subscript 0.75]Se[subscript 0.25] was obtained due to a lowered thermal conductivity and enhanced power factor resulted from high Seebeck coefficient of about −220 µV K[superscript −1] and high Hall mobility ~1120 cm[superscript 2] V[superscript −1] s[superscript −1] at room temperature. A room temperature ZT of ~0.5 and peak ZT of ~1 at about 573–673 K is shown by Se-rich sample Cr[subscript 0.01]Pb[subscript 0.99]Te[subscript 0.25]Se[subscript 0.75]. This improvement of the room temperature ZT improved the average ZT over a wide temperature range and could potentially lead to a single leg efficiency of thermoelectric conversion for Te-rich Cr[subscript 0.015]Pb[subscript 0.985]Te[subscript 0.75]Se[subscript 0.25] up to ~11% and Se-rich Cr[subscript 0.01]Pb[subscript 0.99]Te[subscript 0.25]Se[subscript 0.75] up to ~13% with cold side and hot side temperature at 300 K and 873 K, respectively, if matched with appropriate p-type legs. | en_US |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1016/j.nanoen.2015.02.026 | en_US |
dc.rights | Creative Commons Attribution-NonCommercial-NoDerivs License | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | en_US |
dc.source | Prof. Chen | en_US |
dc.title | Enhancement of thermoelectric performance in n-type PbTe[subscript 1−y]Se[subscript y] by doping Cr and tuning Te:Se ratio | en_US |
dc.title.alternative | Enhancement of thermoelectric performance in n-type PbTe1−ySey by doping Cr and tuning Te:Se ratio | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Chere, Eyob K. et al. “Enhancement of Thermoelectric Performance in N-Type PbTe[subscript 1−y]Se[subscript y] by Doping Cr and Tuning Te:Se Ratio.” Nano Energy 13 (2015): 355–367. | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Mechanical Engineering | en_US |
dc.contributor.approver | Chen, Gang | en_US |
dc.contributor.mitauthor | McEnaney, Kenneth | |
dc.contributor.mitauthor | Chen, Shuo | |
dc.relation.journal | Nano Energy | en_US |
dc.eprint.version | Author's final manuscript | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Chere, Eyob K.; Zhang, Qian; McEnaney, Kenneth; Yao, Mengliang; Cao, Feng; Sun, Jingying; Chen, Shuo; Opeil, Cyril; Chen, Gang; Ren, Zhifeng | en_US |
dspace.embargo.terms | N | en_US |
mit.license | PUBLISHER_CC | en_US |