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dc.contributor.authorChere, Eyob K.
dc.contributor.authorZhang, Qian
dc.contributor.authorYao, Mengliang
dc.contributor.authorCao, Feng
dc.contributor.authorSun, Jingying
dc.contributor.authorChen, Shuo
dc.contributor.authorOpeil, Cyril
dc.contributor.authorRen, Zhifeng
dc.contributor.authorMcEnaney, Kenneth
dc.date.accessioned2017-03-30T19:21:43Z
dc.date.available2017-03-30T19:21:43Z
dc.date.issued2015-02
dc.date.submitted2015-02
dc.identifier.issn2211-2855
dc.identifier.urihttp://hdl.handle.net/1721.1/107788
dc.description.abstractLead telluride and its alloys have been extensively studied for medium temperature thermoelectric applications due to decent figure-of-merit (ZT) at temperature close to 900 K. However, little emphasis has been given to improve the ZT near room temperature. In this investigation, we report a systematic study of Cr doping in PbTe[subscript 1−y]Se[subscript y] with y=0, 0.25, 0.5, 0.75, 0.85, and 1. We found the peak ZT temperature increased with increasing concentration of Se. The highest ZT of ~0.6 at room temperature in Te-rich Cr[subscript 0.015]Pb[subscript 0.985]Te[subscript 0.75]Se[subscript 0.25] was obtained due to a lowered thermal conductivity and enhanced power factor resulted from high Seebeck coefficient of about −220 µV K[superscript −1] and high Hall mobility ~1120 cm[superscript 2] V[superscript −1] s[superscript −1] at room temperature. A room temperature ZT of ~0.5 and peak ZT of ~1 at about 573–673 K is shown by Se-rich sample Cr[subscript 0.01]Pb[subscript 0.99]Te[subscript 0.25]Se[subscript 0.75]. This improvement of the room temperature ZT improved the average ZT over a wide temperature range and could potentially lead to a single leg efficiency of thermoelectric conversion for Te-rich Cr[subscript 0.015]Pb[subscript 0.985]Te[subscript 0.75]Se[subscript 0.25] up to ~11% and Se-rich Cr[subscript 0.01]Pb[subscript 0.99]Te[subscript 0.25]Se[subscript 0.75] up to ~13% with cold side and hot side temperature at 300 K and 873 K, respectively, if matched with appropriate p-type legs.en_US
dc.language.isoen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.nanoen.2015.02.026en_US
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivs Licenseen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en_US
dc.sourceProf. Chenen_US
dc.titleEnhancement of thermoelectric performance in n-type PbTe[subscript 1−y]Se[subscript y] by doping Cr and tuning Te:Se ratioen_US
dc.title.alternativeEnhancement of thermoelectric performance in n-type PbTe1−ySey by doping Cr and tuning Te:Se ratioen_US
dc.typeArticleen_US
dc.identifier.citationChere, Eyob K. et al. “Enhancement of Thermoelectric Performance in N-Type PbTe[subscript 1−y]Se[subscript y] by Doping Cr and Tuning Te:Se Ratio.” Nano Energy 13 (2015): 355–367.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.approverChen, Gangen_US
dc.contributor.mitauthorMcEnaney, Kenneth
dc.contributor.mitauthorChen, Shuo
dc.relation.journalNano Energyen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsChere, Eyob K.; Zhang, Qian; McEnaney, Kenneth; Yao, Mengliang; Cao, Feng; Sun, Jingying; Chen, Shuo; Opeil, Cyril; Chen, Gang; Ren, Zhifengen_US
dspace.embargo.termsNen_US
mit.licensePUBLISHER_CCen_US


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