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dc.contributor.authorGuillen-Burrieza, Elena
dc.contributor.authorLivernois, William
dc.contributor.authorNotarangelo, Katie
dc.contributor.authorKharraz, Jehad
dc.contributor.authorArafat, Hassan A.
dc.contributor.authorGleason, Karen K.
dc.contributor.authorServi, Amelia T
dc.contributor.authorWarsinger, David Elan Martin
dc.contributor.authorLienhard, John H.
dc.date.accessioned2017-04-19T18:09:47Z
dc.date.available2017-04-19T18:09:47Z
dc.date.issued2016-10
dc.date.submitted2016-09
dc.identifier.issn0376-7388
dc.identifier.urihttp://hdl.handle.net/1721.1/108260
dc.description.abstractMembranes possessing high permeability to water vapor and high liquid entry pressure (LEP) are necessary for efficient membrane distillation (MD) desalination. A common technique to prepare specialized MD membranes consists of coating a hydrophilic or hydrophobic base membrane with a low surface-energy material. This increases its liquid entry pressure, making the membrane suitable for MD. However, in addition to increasing LEP, the surface-coating may also decrease permeability of the membrane by reducing its average pore size. In this study, we quantify the effects of initiated chemical vapor deposition (iCVD) polymer coatings on membrane permeability and LEP. We consider whether the iCVD films should have minimized thickness or maximized non-conformality, in order to maximize the permeability achieved for a given value of LEP. We determined theoretically that permeability of a single pore is maximized with a highly non-conformal iCVD coating. However, the overall permeability of a membrane consisting of many pores is maximized when iCVD film thickness is minimized. We applied the findings experimentally, preparing an iCVD-treated track-etched polycarbonate (PCTE) membrane and testing it in a permeate gap membrane distillation (PCMD) system. This study focuses on membranes with clearly defined, cylindrical pores. However, we believe that the principles we discuss will extend to membranes with more complex pore architectures. Overall, this work indicates that the focus of surface-coating development should be on minimizing film thickness, not on increasing their non-conformality.en_US
dc.description.sponsorshipMIT & Masdar Institute Cooperative Program (02/MI/MI/CP/11/07633/GEN/G/00)en_US
dc.description.sponsorshipMassachusetts Institute of Technology. Institute for Soldier Nanotechnologies (W911NF-13-d-0001)en_US
dc.language.isoen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.memsci.2016.10.008en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceProf. Lienhard via Angie Locknaren_US
dc.titleThe effects of iCVD film thickness and conformality on the permeability and wetting of MD membranesen_US
dc.typeArticleen_US
dc.identifier.citationServi, Amelia T.; Guillen-Burrieza, Elena; Warsinger, David M.; Livernois, William; Notarangelo, Katie; Kharraz, Jehad; Lienhard V, John H.; Arafat, Hassan A. and Gleason, Karen K. “The Effects of iCVD Film Thickness and Conformality on the Permeability and Wetting of MD Membranes.” Journal of Membrane Science 523 (February 2017): 470–479. © The Authorsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.approverLienhard, John Hen_US
dc.contributor.mitauthorServi, Amelia T
dc.contributor.mitauthorWarsinger, David Elan Martin
dc.contributor.mitauthorLienhard, John H.
dc.relation.journalJournal of Membrane Scienceen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsServi, Amelia T.; Guillen-Burrieza, Elena; Warsinger, David M.; Livernois, William; Notarangelo, Katie; Kharraz, Jehad; Lienhard V, John H.; Arafat, Hassan A.; Gleason, Karen K.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0003-3446-1473
dc.identifier.orcidhttps://orcid.org/0000-0002-2901-0638
dspace.mitauthor.errortrue
mit.licenseOPEN_ACCESS_POLICYen_US


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