MIT Libraries logoDSpace@MIT

MIT
View Item 
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

Author(s)
Teng, J. H.; Hou, Han Wei; Liu, Zhihong; Palacios, Tomas; Chua, Soo-Jin
Thumbnail
DownloadHigh temperature terahertz.pdf (812.5Kb)
PUBLISHER_CC

Publisher with Creative Commons License

Creative Commons Attribution

Terms of use
Creative Commons Attribution 4.0 International License http://creativecommons.org/licenses/by/4.0/
Metadata
Show full item record
Abstract
In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15.5 and 2.7 kV/W and a low NEP of 0.58 and 10 pW/Hz0.5 were obtained at room temperature and 200 °C, respectively. The advantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz detection are discussed. The physical mechanisms responsible for the temperature dependence of the responsivity and NEP of the GaN HEMT are also analyzed thoroughly.
Date issued
2017-04
URI
http://hdl.handle.net/1721.1/110105
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Research Laboratory of Electronics
Journal
Scientific Reports
Publisher
Nature Publishing Group
Citation
Hou, H. W., Z. Liu, J. H. Teng, T. Palacios, and S. J. Chua. “High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor.” Scientific Reports 7 (April 21, 2017): 46664.
Version: Final published version
ISSN
2045-2322

Collections
  • MIT Open Access Articles

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

My Account

Login

Statistics

OA StatisticsStatistics by CountryStatistics by Department
MIT Libraries
PrivacyPermissionsAccessibilityContact us
MIT
Content created by the MIT Libraries, CC BY-NC unless otherwise noted. Notify us about copyright concerns.