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dc.contributor.authorOh, Yun-Tak
dc.contributor.authorHan, Jung Hoon
dc.contributor.authorChan, Ching-Kit
dc.contributor.authorLee, Patrick A
dc.date.accessioned2017-06-26T21:34:42Z
dc.date.available2017-06-26T21:34:42Z
dc.date.issued2016-09
dc.date.submitted2016-08
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.urihttp://hdl.handle.net/1721.1/110284
dc.description.abstractPeriodically driven systems provide tunable platforms to realize interesting Floquet topological phases and phase transitions. In electronic systems with Weyl dispersions, the band crossings are topologically protected even in the presence of time-periodic perturbations. This robustness permits various routes to shift and tilt the Weyl spectra in the momentum and energy space using circularly polarized light of sufficient intensity. We show that type-II Weyl fermions, in which the Weyl dispersions are tilted with the appearance of pocketlike Fermi surfaces, can be induced in driven Dirac semimetals and line node semimetals. Under a circularly polarized drive, both semimetal systems immediately generate Weyl node pairs whose types can be further controlled by the driving amplitude and direction. The resultant phase diagrams demonstrate experimental feasibilities.en_US
dc.description.sponsorshipUnited States. Department of Energy (Grant No. DE-FG02-03-ER46076)en_US
dc.description.sponsorshipSimons Foundation. Postdoctoral Fellowshipen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.94.121106en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleType-II Weyl cone transitions in driven semimetalsen_US
dc.typeArticleen_US
dc.identifier.citationChan, Ching-Kit et al. “Type-II Weyl Cone Transitions in Driven Semimetals.” Physical Review B 94.12 (2016): n. pag. © 2016 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Materials Processing Centeren_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorChan, Ching-Kit
dc.contributor.mitauthorLee, Patrick A
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2016-09-07T22:00:10Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsChan, Ching-Kit; Oh, Yun-Tak; Han, Jung Hoon; Lee, Patrick A.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0003-2119-4441
dc.identifier.orcidhttps://orcid.org/0000-0001-7809-8157
mit.licensePUBLISHER_POLICYen_US


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