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dc.contributor.authorRodriguez Nieva, Joaquin Francisco
dc.contributor.authorDresselhaus, Mildred
dc.contributor.authorLevitov, Leonid
dc.date.accessioned2017-07-07T13:54:49Z
dc.date.available2017-07-07T13:54:49Z
dc.date.issued2015-01
dc.date.submitted2014-07
dc.identifier.issn1530-6984
dc.identifier.issn1530-6992
dc.identifier.urihttp://hdl.handle.net/1721.1/110518
dc.description.abstractTransport in photoactive graphene heterostructures, originating from the dynamics of photogenerated hot carriers, is governed by the processes of thermionic emission, electron–lattice thermal imbalance, and cooling. These processes give rise to interesting photoresponse effects, in particular negative differential resistance (NDR) arising in the hot-carrier regime. The NDR effect stems from a strong dependence of electron–lattice cooling on the carrier density, which results in the carrier temperature dropping precipitously upon increasing bias. The ON–OFF switching between the NDR regime and the conventional cold emission regime, as well as the gate-controlled closed-circuit current that is present at zero bias voltage, can serve as signatures of hot-carrier dominated transport.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant DMR1004147)en_US
dc.description.sponsorshipUnited States. Dept. of Energy. Center for Excitonics (Award desc0001088)en_US
dc.language.isoen_US
dc.publisherAmerican Chemical Society (ACS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/nl502522qen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourcearXiven_US
dc.titleThermionic Emission and Negative dI/dV in Photoactive Graphene Heterostructuresen_US
dc.typeArticleen_US
dc.identifier.citationRodriguez-Nieva, Joaquin F., Mildred S. Dresselhaus, and Leonid S. Levitov. “Thermionic Emission and Negative D I /D V in Photoactive Graphene Heterostructures.” Nano Letters 15.3 (2015): 1451–1456.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorRodriguez Nieva, Joaquin Francisco
dc.contributor.mitauthorDresselhaus, Mildred
dc.contributor.mitauthorLevitov, Leonid
dc.relation.journalNano Lettersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsRodriguez-Nieva, Joaquin F.; Dresselhaus, Mildred S.; Levitov, Leonid S.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3023-396X
dc.identifier.orcidhttps://orcid.org/0000-0001-8492-2261
dc.identifier.orcidhttps://orcid.org/0000-0002-4268-731X
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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